The effect of the dc current injection on trapped domain walls in magnetic nanostructures designed for high precision anisotropy magnetoresistance measurements was investigated. The magnetoresistance was measured at 4.1 K by a low-noise four-terminal dc measurement system in the range of the external magnetic field H from -100 to 100 mT along the wire. The switching field distribution at each injecting current was found to be less than 5%. The results show that the depinning field of the domain wall decreases when the electron current is applied along the direction of the domain wall propagation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)