TY - JOUR
T1 - Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure
AU - Sadoh, Taizoh
AU - Ohyama, Yasuhiro
AU - Kenjo, Atsushi
AU - Ikeda, Keiji
AU - Yamashita, Yoshimi
AU - Miyao, Masanobu
PY - 2006/5/25
Y1 - 2006/5/25
N2 - Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
AB - Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
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U2 - 10.1143/JJAP.45.4370
DO - 10.1143/JJAP.45.4370
M3 - Article
AN - SCOPUS:33744472219
VL - 45
SP - 4370
EP - 4373
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -