Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure

Taizoh Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Keiji Ikeda, Yoshimi Yamashita, Masanobu Miyao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.

Original languageEnglish
Pages (from-to)4370-4373
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 B
DOIs
Publication statusPublished - May 25 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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