Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 B|
|Publication status||Published - May 25 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)