Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure

Taizoh Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Keiji Ikeda, Yoshimi Yamashita, Masanobu Miyao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.

Original languageEnglish
Pages (from-to)4370-4373
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume45
Issue number5 B
DOIs
Publication statusPublished - May 25 2006

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Thin film transistors
Polysilicon
floating
transistors
retarding
silicon
thin films
Fabrication
fabrication
Lasers
Ions
Metals
metals
lasers
ions
Temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure. / Sadoh, Taizoh; Ohyama, Yasuhiro; Kenjo, Atsushi; Ikeda, Keiji; Yamashita, Yoshimi; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 45, No. 5 B, 25.05.2006, p. 4370-4373.

Research output: Contribution to journalArticle

Sadoh, Taizoh ; Ohyama, Yasuhiro ; Kenjo, Atsushi ; Ikeda, Keiji ; Yamashita, Yoshimi ; Miyao, Masanobu. / Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure. In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 2006 ; Vol. 45, No. 5 B. pp. 4370-4373.
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