Abstract
Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
| Original language | English |
|---|---|
| Pages (from-to) | 4370-4373 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 5 B |
| DOIs | |
| Publication status | Published - May 25 2006 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure'. Together they form a unique fingerprint.
Cite this
Sadoh, T., Ohyama, Y., Kenjo, A., Ikeda, K., Yamashita, Y., & Miyao, M. (2006). Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(5 B), 4370-4373. https://doi.org/10.1143/JJAP.45.4370