Abstract
Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
| Original language | English |
|---|---|
| Pages (from-to) | 4370-4373 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes |
| Volume | 45 |
| Issue number | 5 B |
| DOIs | |
| Publication status | Published - May 25 2006 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure. / Sadoh, Taizoh; Ohyama, Yasuhiro; Kenjo, Atsushi; Ikeda, Keiji; Yamashita, Yoshimi; Miyao, Masanobu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 45, No. 5 B, 25.05.2006, p. 4370-4373.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Suppression of floating body effects in polycrystalline silicon thin-film transistor by schottky source/drain structure
AU - Sadoh, Taizoh
AU - Ohyama, Yasuhiro
AU - Kenjo, Atsushi
AU - Ikeda, Keiji
AU - Yamashita, Yoshimi
AU - Miyao, Masanobu
PY - 2006/5/25
Y1 - 2006/5/25
N2 - Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
AB - Thin-film transistors (TFTs) with Schottky source/drain (S/D) structures were fabricated using NiSi and laser-annealed polycrystalline silicon (poly-Si) as Schottky barrier metals and active layers, respectively. The whole fabrication process was performed at low temperatures (<500°C). The TFTs showed good ambipolar operation characteristics with Ion/I off of ∼105 for both the p-channel and n-channel modes. Moreover, the kink effects due to floating body effects, which were observed in conventionally doped S/D TFTs, were successfully suppressed.
UR - http://www.scopus.com/inward/record.url?scp=33744472219&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33744472219&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.4370
DO - 10.1143/JJAP.45.4370
M3 - Article
AN - SCOPUS:33744472219
VL - 45
SP - 4370
EP - 4373
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -