Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue: Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials)

T. Sadoh; Yasuhiro Ohyama; Atsushi Kenjo; Keiji Ikeda; Yoshimi Yamashita; Masanobu Miyao

Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue: Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials)

T. Sadoh, Yasuhiro Ohyama, Atsushi Kenjo, Keiji Ikeda, Yoshimi Yamashita, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4370-4373
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	5
Publication status	Published - May 2006

Access to Document

Cite this

Sadoh, T., Ohyama, Y., Kenjo, A., Ikeda, K., Yamashita, Y., & Miyao, M. (2006). Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue: Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials). Japanese Journal of Applied Physics, Part 2: Letters, 45(5), 4370-4373. http://id.ndl.go.jp/bib/7926437

Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue : Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials). / Sadoh, T.; Ohyama, Yasuhiro; Kenjo, Atsushi; Ikeda, Keiji; Yamashita, Yoshimi; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 5, 05.2006, p. 4370-4373.

Research output: Contribution to journal › Article › peer-review

Sadoh, T, Ohyama, Y, Kenjo, A, Ikeda, K, Yamashita, Y & Miyao, M 2006, 'Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue: Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials)', Japanese Journal of Applied Physics, Part 2: Letters, vol. 45, no. 5, pp. 4370-4373. <http://id.ndl.go.jp/bib/7926437>

Sadoh, T. ; Ohyama, Yasuhiro ; Kenjo, Atsushi ; Ikeda, Keiji ; Yamashita, Yoshimi ; Miyao, Masanobu. / Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue : Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials). In: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; Vol. 45, No. 5. pp. 4370-4373.

@article{e389148a0c44493494ac512bc5a87ebc,

title = "Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue: Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials)",

author = "T. Sadoh and Yasuhiro Ohyama and Atsushi Kenjo and Keiji Ikeda and Yoshimi Yamashita and Masanobu Miyao",

year = "2006",

month = may,

language = "English",

volume = "45",

pages = "4370--4373",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure (Special Issue

T2 - Active-Matrix Liquid-Crystal Displays--TFT Technologies and Related Materials)

AU - Sadoh, T.

AU - Ohyama, Yasuhiro

AU - Kenjo, Atsushi

AU - Ikeda, Keiji

AU - Yamashita, Yoshimi

AU - Miyao, Masanobu

PY - 2006/5

Y1 - 2006/5

M3 - Article

VL - 45

SP - 4370

EP - 4373

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 5

ER -