Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Hiroaki Yamashita; Hideyuki Ura; Syotaro Ono; Masato Nashiki; Kenji Mii; Wataru Saito; Jun Onodera; Yoshitaka Hokomoto

doi:10.1109/ISPSD.2015.7123475

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

Original language	English
Title of host publication	2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	405-408
Number of pages	4
ISBN (Electronic)	9781479962594
DOIs	https://doi.org/10.1109/ISPSD.2015.7123475
Publication status	Published - Jun 12 2015
Externally published	Yes
Event	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China Duration: May 10 2015 → May 14 2015

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2015-June
ISSN (Print)	1063-6854

Other

Other	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Country/Territory	China
City	Hong Kong
Period	5/10/15 → 5/14/15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2015.7123475

Cite this

Yamashita, H., Ura, H., Ono, S., Nashiki, M., Mii, K., Saito, W., Onodera, J., & Hokomoto, Y. (2015). Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 405-408). [7123475] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123475

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. / Yamashita, Hiroaki; Ura, Hideyuki; Ono, Syotaro et al.

2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 405-408 7123475 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamashita, H, Ura, H, Ono, S, Nashiki, M, Mii, K, Saito, W, Onodera, J & Hokomoto, Y 2015, Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. in 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015., 7123475, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., pp. 405-408, 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Hong Kong, China, 5/10/15. https://doi.org/10.1109/ISPSD.2015.7123475

Yamashita H, Ura H, Ono S, Nashiki M, Mii K, Saito W et al. Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 405-408. 7123475. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2015.7123475

Yamashita, Hiroaki ; Ura, Hideyuki ; Ono, Syotaro et al. / Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 405-408 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{582825cc54214b9b9d51277bc52146fe,

title = "Suppression of switching loss dependence on charge imbalance of superjunction MOSFET",

abstract = "We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.",

author = "Hiroaki Yamashita and Hideyuki Ura and Syotaro Ono and Masato Nashiki and Kenji Mii and Wataru Saito and Jun Onodera and Yoshitaka Hokomoto",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 ; Conference date: 10-05-2015 Through 14-05-2015",

year = "2015",

month = jun,

day = "12",

doi = "10.1109/ISPSD.2015.7123475",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "405--408",

booktitle = "2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015",

address = "United States",

}

TY - GEN

T1 - Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

AU - Yamashita, Hiroaki

AU - Ura, Hideyuki

AU - Ono, Syotaro

AU - Nashiki, Masato

AU - Mii, Kenji

AU - Saito, Wataru

AU - Onodera, Jun

AU - Hokomoto, Yoshitaka

PY - 2015/6/12

Y1 - 2015/6/12

N2 - We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

AB - We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

UR - http://www.scopus.com/inward/record.url?scp=84944687702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944687702&partnerID=8YFLogxK

U2 - 10.1109/ISPSD.2015.7123475

DO - 10.1109/ISPSD.2015.7123475

M3 - Conference contribution

AN - SCOPUS:84944687702

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 405

EP - 408

BT - 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015

Y2 - 10 May 2015 through 14 May 2015

ER -

Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this