Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Hiroaki Yamashita, Hideyuki Ura, Syotaro Ono, Masato Nashiki, Kenji Mii, Wataru Saito, Jun Onodera, Yoshitaka Hokomoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

Original languageEnglish
Title of host publication2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages405-408
Number of pages4
ISBN (Electronic)9781479962594
DOIs
Publication statusPublished - Jun 12 2015
Externally publishedYes
Event27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China
Duration: May 10 2015May 14 2015

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2015-June
ISSN (Print)1063-6854

Other

Other27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
CountryChina
CityHong Kong
Period5/10/155/14/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Yamashita, H., Ura, H., Ono, S., Nashiki, M., Mii, K., Saito, W., Onodera, J., & Hokomoto, Y. (2015). Suppression of switching loss dependence on charge imbalance of superjunction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 405-408). [7123475] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123475