Surface Activated Bonding of ALD Al2O3films

Junsha Wang; Ryo Takigawa; Tadatomo Suga

doi:10.1109/ICSJ55786.2022.10034666

Surface Activated Bonding of ALD Al₂O₃films

Junsha Wang, Ryo Takigawa, Tadatomo Suga

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.

Original language	English
Title of host publication	2022 IEEE CPMT Symposium Japan, ICSJ 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	57-60
Number of pages	4
ISBN (Electronic)	9781665486132
DOIs	https://doi.org/10.1109/ICSJ55786.2022.10034666
Publication status	Published - 2022
Event	11th IEEE CPMT Symposium Japan, ICSJ 2022 - Kyoto, Japan Duration: Nov 9 2022 → Nov 11 2022

Publication series

Name	2022 IEEE CPMT Symposium Japan, ICSJ 2022

Conference

Conference	11th IEEE CPMT Symposium Japan, ICSJ 2022
Country/Territory	Japan
City	Kyoto
Period	11/9/22 → 11/11/22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/ICSJ55786.2022.10034666

Cite this

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title = "Surface Activated Bonding of ALD Al2O3films",

abstract = "Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.",

author = "Junsha Wang and Ryo Takigawa and Tadatomo Suga",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 11th IEEE CPMT Symposium Japan, ICSJ 2022 ; Conference date: 09-11-2022 Through 11-11-2022",

year = "2022",

doi = "10.1109/ICSJ55786.2022.10034666",

language = "English",

series = "2022 IEEE CPMT Symposium Japan, ICSJ 2022",

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AU - Wang, Junsha

AU - Takigawa, Ryo

AU - Suga, Tadatomo

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N2 - Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.

AB - Plasma enhanced ALD Al2O3 films were successfully bonded by surface activated bonding. The increase of O2 plasma power for deposition promoted the crystallinity of Al2O3 slightly, and the additional H2 plasma post-treatment improved the hydrophilicity of the film dramatically. The bond strength in humid air was not affected strongly by film deposition parameters, while that in dry N2 was improved by both methods. Water stress corrosion has a big effect on the debonding process resulting in higher bond strength in dry N2. Under the same debonding atmosphere, the bond strength of amorphous Al2O3 films was slightly lower than that of sapphire bonding.

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