Surface activated bonding of LiNbO3 and GaN at room temperature

R. Takigawa, E. Higurashi, T. Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this study, we report room-temperature wafer bonding of a GaN and a LiNbO3 (LN) using a surface activated bonding (SAB) method. The modified SAB using Fe-containing Ar ion beam bombardment demonstrated the stronger bond strength of a GaN and a LN than the standard SAB using Ar fast atom beam bombardment. As the result of a dicing test, the bonded wafer using modified SAB method was successfully cut into 1 × 1 mm2 dies without interfacial debonding owing to the applied stress during dicing. This result shows a strong bond strength which may be sufficient for device applications. It was found that Fe nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between a negative surface of LN and a Ga-face of GaN.

Original languageEnglish
Title of host publicationECS Transactions
EditorsC.S. Tan, T. Suga, H. Baumgart, F. Fournel, M. Goorsky, K.D. Hobart, R. Knechtel
PublisherElectrochemical Society Inc.
Pages207-213
Number of pages7
Edition5
ISBN (Electronic)9781607688518
ISBN (Print)9781510871656
DOIs
Publication statusPublished - 2018
EventSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Sep 30 2018Oct 4 2018

Publication series

NameECS Transactions
Number5
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/TerritoryMexico
CityCancun
Period9/30/1810/4/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Surface activated bonding of LiNbO3 and GaN at room temperature'. Together they form a unique fingerprint.

Cite this