Surface activated bonding of LiNbO 3 and GaN at room temperature

R. Takigawa, E. Higurashi, T. Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this study, we report room-temperature wafer bonding of a GaN and a LiNbO 3 (LN) using a surface activated bonding (SAB) method. The modified SAB using Fe-containing Ar ion beam bombardment demonstrated the stronger bond strength of a GaN and a LN than the standard SAB using Ar fast atom beam bombardment. As the result of a dicing test, the bonded wafer using modified SAB method was successfully cut into 1 × 1 mm 2 dies without interfacial debonding owing to the applied stress during dicing. This result shows a strong bond strength which may be sufficient for device applications. It was found that Fe nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between a negative surface of LN and a Ga-face of GaN.

Original languageEnglish
Title of host publicationECS Transactions
EditorsM. Goorsky, K.D. Hobart, F. Fournel, R. Knechtel, C.S. Tan, H. Baumgart, T. Suga
PublisherElectrochemical Society Inc.
Pages207-213
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2018
EventSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Sep 30 2018Oct 4 2018

Publication series

NameECS Transactions
Number5
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period9/30/1810/4/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Takigawa, R., Higurashi, E., & Asano, T. (2018). Surface activated bonding of LiNbO 3 and GaN at room temperature In M. Goorsky, K. D. Hobart, F. Fournel, R. Knechtel, C. S. Tan, H. Baumgart, & T. Suga (Eds.), ECS Transactions (5 ed., pp. 207-213). (ECS Transactions; Vol. 86, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/08605.0207ecst