Surface activated bonding of LiNbO 3 and GaN at room temperature

Ryo Takigawa, E. Higurashi, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report room-temperature wafer bonding of a GaN and a LiNbO 3 (LN) using a surface activated bonding (SAB) method. The modified SAB using Fe-containing Ar ion beam bombardment demonstrated the stronger bond strength of a GaN and a LN than the standard SAB using Ar fast atom beam bombardment. As the result of a dicing test, the bonded wafer using modified SAB method was successfully cut into 1 × 1 mm 2 dies without interfacial debonding owing to the applied stress during dicing. This result shows a strong bond strength which may be sufficient for device applications. It was found that Fe nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between a negative surface of LN and a Ga-face of GaN.

Original languageEnglish
Title of host publicationECS Transactions
EditorsM. Goorsky, K.D. Hobart, F. Fournel, R. Knechtel, C.S. Tan, H. Baumgart, T. Suga
PublisherElectrochemical Society Inc.
Pages207-213
Number of pages7
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2018
EventSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Sep 30 2018Oct 4 2018

Publication series

NameECS Transactions
Number5
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period9/30/1810/4/18

Fingerprint

Ion beams
Temperature
Wafer bonding
Debonding
Adhesives
Atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Takigawa, R., Higurashi, E., & Asano, T. (2018). Surface activated bonding of LiNbO 3 and GaN at room temperature In M. Goorsky, K. D. Hobart, F. Fournel, R. Knechtel, C. S. Tan, H. Baumgart, & T. Suga (Eds.), ECS Transactions (5 ed., pp. 207-213). (ECS Transactions; Vol. 86, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/08605.0207ecst

Surface activated bonding of LiNbO 3 and GaN at room temperature . / Takigawa, Ryo; Higurashi, E.; Asano, Tanemasa.

ECS Transactions. ed. / M. Goorsky; K.D. Hobart; F. Fournel; R. Knechtel; C.S. Tan; H. Baumgart; T. Suga. 5. ed. Electrochemical Society Inc., 2018. p. 207-213 (ECS Transactions; Vol. 86, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takigawa, R, Higurashi, E & Asano, T 2018, Surface activated bonding of LiNbO 3 and GaN at room temperature in M Goorsky, KD Hobart, F Fournel, R Knechtel, CS Tan, H Baumgart & T Suga (eds), ECS Transactions. 5 edn, ECS Transactions, no. 5, vol. 86, Electrochemical Society Inc., pp. 207-213, Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico, 9/30/18. https://doi.org/10.1149/08605.0207ecst
Takigawa R, Higurashi E, Asano T. Surface activated bonding of LiNbO 3 and GaN at room temperature In Goorsky M, Hobart KD, Fournel F, Knechtel R, Tan CS, Baumgart H, Suga T, editors, ECS Transactions. 5 ed. Electrochemical Society Inc. 2018. p. 207-213. (ECS Transactions; 5). https://doi.org/10.1149/08605.0207ecst
Takigawa, Ryo ; Higurashi, E. ; Asano, Tanemasa. / Surface activated bonding of LiNbO 3 and GaN at room temperature ECS Transactions. editor / M. Goorsky ; K.D. Hobart ; F. Fournel ; R. Knechtel ; C.S. Tan ; H. Baumgart ; T. Suga. 5. ed. Electrochemical Society Inc., 2018. pp. 207-213 (ECS Transactions; 5).
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