Abstract
This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 |
| Pages | 793-796 |
| Number of pages | 4 |
| Volume | PART A |
| Publication status | Published - 2005 |
| Event | ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, United States Duration: Jul 17 2005 → Jul 22 2005 |
Other
| Other | ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 7/17/05 → 7/22/05 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Surface activated flip-chip bonding of laser chips. / Higurashi, Eiji; Suga, Tadatomo; Nakagawa, Masao; Sawada, Renshi.
Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Vol. PART A 2005. p. 793-796.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Surface activated flip-chip bonding of laser chips
AU - Higurashi, Eiji
AU - Suga, Tadatomo
AU - Nakagawa, Masao
AU - Sawada, Renshi
PY - 2005
Y1 - 2005
N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
UR - http://www.scopus.com/inward/record.url?scp=32844470507&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=32844470507&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0791842002
VL - PART A
SP - 793
EP - 796
BT - Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
ER -