Surface activated flip-chip bonding of laser chips

Eiji Higurashi; Tadatomo Suga; Masao Nakagawa; Renshi Sawada

Surface activated flip-chip bonding of laser chips

Eiji Higurashi, Tadatomo Suga, Masao Nakagawa, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Original language	English
Title of host publication	Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
Pages	793-796
Number of pages	4
Volume	PART A
Publication status	Published - 2005
Event	ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, United States Duration: Jul 17 2005 → Jul 22 2005

Other

Other	ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
Country/Territory	United States
City	San Francisco, CA
Period	7/17/05 → 7/22/05

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Surface activated flip-chip bonding of laser chips. / Higurashi, Eiji; Suga, Tadatomo; Nakagawa, Masao et al.

Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. Vol. PART A 2005. p. 793-796.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Higurashi, E, Suga, T, Nakagawa, M & Sawada, R 2005, Surface activated flip-chip bonding of laser chips. in Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005. vol. PART A, pp. 793-796, ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005, San Francisco, CA, United States, 7/17/05.

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abstract = "This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.",

author = "Eiji Higurashi and Tadatomo Suga and Masao Nakagawa and Renshi Sawada",

year = "2005",

language = "English",

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volume = "PART A",

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note = "ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 ; Conference date: 17-07-2005 Through 22-07-2005",

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AU - Nakagawa, Masao

AU - Sawada, Renshi

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N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

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M3 - Conference contribution

AN - SCOPUS:32844470507

SN - 0791842002

VL - PART A

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EP - 796

BT - Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005

T2 - ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005

Y2 - 17 July 2005 through 22 July 2005

ER -

Surface activated flip-chip bonding of laser chips

Abstract

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All Science Journal Classification (ASJC) codes

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