Surface activated flip-chip bonding of laser chips

Eiji Higurashi, Tadatomo Suga, Masao Nakagawa, Renshi Sawada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

    Original languageEnglish
    Title of host publicationProceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
    Pages793-796
    Number of pages4
    VolumePART A
    Publication statusPublished - 2005
    EventASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, United States
    Duration: Jul 17 2005Jul 22 2005

    Other

    OtherASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005
    Country/TerritoryUnited States
    CitySan Francisco, CA
    Period7/17/057/22/05

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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