Abstract
This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
Original language | English |
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Title of host publication | Proceedings of the ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 |
Pages | 793-796 |
Number of pages | 4 |
Volume | PART A |
Publication status | Published - 2005 |
Event | ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 - San Francisco, CA, United States Duration: Jul 17 2005 → Jul 22 2005 |
Other
Other | ASME/Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems: Advances in Electronic Packaging 2005 |
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Country | United States |
City | San Francisco, CA |
Period | 7/17/05 → 7/22/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)