Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si

Ryo Takigawa, Eiji Higurashi, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - Jun 13 2017
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: May 16 2017May 18 2017

Publication series

NameProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period5/16/175/18/17

Fingerprint

Wafer bonding
lithium niobate

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Takigawa, R., Higurashi, E., & Asano, T. (2017). Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 [7947443] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947443

Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. / Takigawa, Ryo; Higurashi, Eiji; Asano, Tanemasa.

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7947443 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takigawa, R, Higurashi, E & Asano, T 2017, Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947443, Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Institute of Electrical and Electronics Engineers Inc., 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 5/16/17. https://doi.org/10.23919/LTB-3D.2017.7947443
Takigawa R, Higurashi E, Asano T. Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7947443. (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). https://doi.org/10.23919/LTB-3D.2017.7947443
Takigawa, Ryo ; Higurashi, Eiji ; Asano, Tanemasa. / Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).
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