Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

Makoto Arita, Kazuhisa Torigoe, Takashi Yamauchi, Takashi Nagaoka, Toru Aiso, Yasuhisa Yamashita, Teruaki Motooka

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    14 Citations (Scopus)

    Abstract

    The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼10 19 to n-type ∼1020cm-3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014cm-3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼10 20cm-3.

    Original languageEnglish
    Article number132103
    JournalApplied Physics Letters
    Volume104
    Issue number13
    DOIs
    Publication statusPublished - Mar 31 2014

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

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