Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

Makoto Arita, Kazuhisa Torigoe, Takashi Yamauchi, Takashi Nagaoka, Toru Aiso, Yasuhisa Yamashita, Teruaki Motooka

Research output: Contribution to journalArticle

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Abstract

The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼10 19 to n-type ∼1020cm-3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014cm-3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼10 20cm-3.

Original languageEnglish
Article number132103
JournalApplied Physics Letters
Volume104
Issue number13
DOIs
Publication statusPublished - Mar 31 2014

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microscopy
Fermi surfaces
conduction bands
valence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Arita, M., Torigoe, K., Yamauchi, T., Nagaoka, T., Aiso, T., Yamashita, Y., & Motooka, T. (2014). Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy. Applied Physics Letters, 104(13), [132103]. https://doi.org/10.1063/1.4870419

Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy. / Arita, Makoto; Torigoe, Kazuhisa; Yamauchi, Takashi; Nagaoka, Takashi; Aiso, Toru; Yamashita, Yasuhisa; Motooka, Teruaki.

In: Applied Physics Letters, Vol. 104, No. 13, 132103, 31.03.2014.

Research output: Contribution to journalArticle

Arita, M, Torigoe, K, Yamauchi, T, Nagaoka, T, Aiso, T, Yamashita, Y & Motooka, T 2014, 'Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy', Applied Physics Letters, vol. 104, no. 13, 132103. https://doi.org/10.1063/1.4870419
Arita, Makoto ; Torigoe, Kazuhisa ; Yamauchi, Takashi ; Nagaoka, Takashi ; Aiso, Toru ; Yamashita, Yasuhisa ; Motooka, Teruaki. / Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy. In: Applied Physics Letters. 2014 ; Vol. 104, No. 13.
@article{b56be22d7a6443a4bce81edfdc7f853f,
title = "Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy",
abstract = "The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼10 19 to n-type ∼1020cm-3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014cm-3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼10 20cm-3.",
author = "Makoto Arita and Kazuhisa Torigoe and Takashi Yamauchi and Takashi Nagaoka and Toru Aiso and Yasuhisa Yamashita and Teruaki Motooka",
year = "2014",
month = "3",
day = "31",
doi = "10.1063/1.4870419",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

AU - Arita, Makoto

AU - Torigoe, Kazuhisa

AU - Yamauchi, Takashi

AU - Nagaoka, Takashi

AU - Aiso, Toru

AU - Yamashita, Yasuhisa

AU - Motooka, Teruaki

PY - 2014/3/31

Y1 - 2014/3/31

N2 - The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼10 19 to n-type ∼1020cm-3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014cm-3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼10 20cm-3.

AB - The workfunction change in doped Si was examined using Kelvin force microscopy in a wide range of doping concentrations from p-type ∼10 19 to n-type ∼1020cm-3 corresponding to the bulk Fermi-level positions from near the valence-band top to conduction-band minimum. Experimental data can be reproduced by model calculations using an appropriate surface-state density composed of the donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for doping concentrations less than ∼1014cm-3 while the bending becomes prominent and the surface Fermi-level is eventually pinned in the midgap region as the concentration increases to ∼10 20cm-3.

UR - http://www.scopus.com/inward/record.url?scp=84898059879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898059879&partnerID=8YFLogxK

U2 - 10.1063/1.4870419

DO - 10.1063/1.4870419

M3 - Article

AN - SCOPUS:84898059879

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132103

ER -