Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation

Satoshi Ogawa, Ahmad Syahrin Idris, Yu Han, Haisong Jiang, Kiichi Hamamoto

Research output: Contribution to journalArticle

Abstract

The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.

Original languageEnglish
Article numberSJJB04
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSJ
DOIs
Publication statusPublished - Jan 1 2019

Fingerprint

Wet etching
Passivation
passivity
Sol-gels
Curing
Waveguides
etching
gels
Semiconductor materials
curing
waveguides
Sol-gel process
Etching
Plasmas
Polymers
Gases
injection
causes
polymers
gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation. / Ogawa, Satoshi; Idris, Ahmad Syahrin; Han, Yu; Jiang, Haisong; Hamamoto, Kiichi.

In: Japanese Journal of Applied Physics, Vol. 58, No. SJ, SJJB04, 01.01.2019.

Research output: Contribution to journalArticle

@article{56940331cef54956836620b3f7a8b1c8,
title = "Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation",
abstract = "The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.",
author = "Satoshi Ogawa and Idris, {Ahmad Syahrin} and Yu Han and Haisong Jiang and Kiichi Hamamoto",
year = "2019",
month = "1",
day = "1",
doi = "10.7567/1347-4065/ab27b2",
language = "English",
volume = "58",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "SJ",

}

TY - JOUR

T1 - Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation

AU - Ogawa, Satoshi

AU - Idris, Ahmad Syahrin

AU - Han, Yu

AU - Jiang, Haisong

AU - Hamamoto, Kiichi

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.

AB - The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.

UR - http://www.scopus.com/inward/record.url?scp=85072844055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072844055&partnerID=8YFLogxK

U2 - 10.7567/1347-4065/ab27b2

DO - 10.7567/1347-4065/ab27b2

M3 - Article

AN - SCOPUS:85072844055

VL - 58

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - SJ

M1 - SJJB04

ER -