Abstract
The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.
| Original language | English |
|---|---|
| Article number | SJJB04 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 58 |
| Issue number | SJ |
| DOIs | |
| Publication status | Published - Jan 1 2019 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation. / Ogawa, Satoshi; Idris, Ahmad Syahrin; Han, Yu; Jiang, Haisong; Hamamoto, Kiichi.
In: Japanese Journal of Applied Physics, Vol. 58, No. SJ, SJJB04, 01.01.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface improvement investigation of sol-gel SiO2 cladding for waveguide device passivation
AU - Ogawa, Satoshi
AU - Idris, Ahmad Syahrin
AU - Han, Yu
AU - Jiang, Haisong
AU - Hamamoto, Kiichi
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.
AB - The sol-gel method is a well-known process for SiO2 formation on top of a semiconductor-based waveguide. This method does not require expensive equipment or SiH4 gas. However, it may result in difficulty with wet-etching, which prevents proper current injection into the semiconductor layer. We have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main causes of the anti-etching property might be due to the formation of a polymer layer after the curing process. To improve the surface condition, plasma ashing, in addition to 700 °C curing, is proposed. Regular wet etching of SiO2 layer on Si with a ratio of 1800 nm min-1 has been successfully confirmed.
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UR - http://www.scopus.com/inward/citedby.url?scp=85072844055&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab27b2
DO - 10.7567/1347-4065/ab27b2
M3 - Article
AN - SCOPUS:85072844055
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SJ
M1 - SJJB04
ER -