Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire

Kenshiro Suenaga, Hyun Goo Ji, Yung Chang Lin, Tom Vincent, Mina Maruyama, Adha Sukma Aji, Yoshihiro Shiratsuchi, Dong Ding, Kenji Kawahara, Susumu Okada, Vishal Panchal, Olga Kazakova, Hiroki Hibino, Kazu Suenaga, Hiroki Ago

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.

Original languageEnglish
JournalACS nano
DOIs
Publication statusAccepted/In press - Jan 1 2018

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Graphite
Aluminum Oxide
Sapphire
Graphene
Heterojunctions
Monolayers
graphene
sapphire
synthesis
Transmission electron microscopy
molybdenum disulfides
transmission electron microscopy
Merging
Sulfur
Epitaxial growth
Crystal orientation
epitaxy
Electron microscopy
Molybdenum
Transition metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire. / Suenaga, Kenshiro; Ji, Hyun Goo; Lin, Yung Chang; Vincent, Tom; Maruyama, Mina; Aji, Adha Sukma; Shiratsuchi, Yoshihiro; Ding, Dong; Kawahara, Kenji; Okada, Susumu; Panchal, Vishal; Kazakova, Olga; Hibino, Hiroki; Suenaga, Kazu; Ago, Hiroki.

In: ACS nano, 01.01.2018.

Research output: Contribution to journalArticle

Suenaga, K, Ji, HG, Lin, YC, Vincent, T, Maruyama, M, Aji, AS, Shiratsuchi, Y, Ding, D, Kawahara, K, Okada, S, Panchal, V, Kazakova, O, Hibino, H, Suenaga, K & Ago, H 2018, 'Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire', ACS nano. https://doi.org/10.1021/acsnano.8b04612
Suenaga, Kenshiro ; Ji, Hyun Goo ; Lin, Yung Chang ; Vincent, Tom ; Maruyama, Mina ; Aji, Adha Sukma ; Shiratsuchi, Yoshihiro ; Ding, Dong ; Kawahara, Kenji ; Okada, Susumu ; Panchal, Vishal ; Kazakova, Olga ; Hibino, Hiroki ; Suenaga, Kazu ; Ago, Hiroki. / Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire. In: ACS nano. 2018.
@article{2c480c8c08b8436f9876e2a14acdecb9,
title = "Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire",
abstract = "Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.",
author = "Kenshiro Suenaga and Ji, {Hyun Goo} and Lin, {Yung Chang} and Tom Vincent and Mina Maruyama and Aji, {Adha Sukma} and Yoshihiro Shiratsuchi and Dong Ding and Kenji Kawahara and Susumu Okada and Vishal Panchal and Olga Kazakova and Hiroki Hibino and Kazu Suenaga and Hiroki Ago",
year = "2018",
month = "1",
day = "1",
doi = "10.1021/acsnano.8b04612",
language = "English",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",

}

TY - JOUR

T1 - Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire

AU - Suenaga, Kenshiro

AU - Ji, Hyun Goo

AU - Lin, Yung Chang

AU - Vincent, Tom

AU - Maruyama, Mina

AU - Aji, Adha Sukma

AU - Shiratsuchi, Yoshihiro

AU - Ding, Dong

AU - Kawahara, Kenji

AU - Okada, Susumu

AU - Panchal, Vishal

AU - Kazakova, Olga

AU - Hibino, Hiroki

AU - Suenaga, Kazu

AU - Ago, Hiroki

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.

AB - Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=85054196705&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054196705&partnerID=8YFLogxK

U2 - 10.1021/acsnano.8b04612

DO - 10.1021/acsnano.8b04612

M3 - Article

C2 - 30232883

AN - SCOPUS:85054196705

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

ER -