Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD

We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH₄/H₂ and N₂ multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles.