Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD

Giichiro Uchida, Kosuke Yamamoto, Yuki Kawashima, Muneharu Sato, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Michio Kondo, Masaharu Shiratani

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Abstract

We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH4/H2 and N2 multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles.

Original languageEnglish
Pages (from-to)3017-3020
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number10
DOIs
Publication statusPublished - Oct 1 2011

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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