TY - JOUR
T1 - Surface nitridation of silicon nano-particles using double multi-hollow discharge plasma CVD
AU - Uchida, Giichiro
AU - Yamamoto, Kosuke
AU - Kawashima, Yuki
AU - Sato, Muneharu
AU - Nakahara, Kenta
AU - Kamataki, Kunihiro
AU - Itagaki, Naho
AU - Koga, Kazunori
AU - Kondo, Michio
AU - Shiratani, Masaharu
PY - 2011/10/1
Y1 - 2011/10/1
N2 - We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH4/H2 and N2 multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles.
AB - We present production of silicon nano-particles and their surface nitridation for efficient multiple-exciton generation. Nitridated silicon nano-particles were produced using double multi-hollow discharge plasma CVD, where generation of silicon particles and their nitridation were independently performed using SiH4/H2 and N2 multi-hollow discharge plasmas. We succeeded in controlling nitrogen content in a silicon nano-particle by varying a number density of N radicals irradiated to the Si particle. We also observed strong photoluminescence (PL) emission around 300-500 nm from silicon nano-particles, where the PL peak energy is about 2.5 and 3.1 eV for pure Si nano-particles, and 2.5, 3.1, and 4.1 eV for nitridated Si nano-particles. The additional UV-peak of 4.1 eV from nitridated Si particles is closely related to the nitridation surface layer on Si nano-particles.
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U2 - 10.1002/pssc.201001230
DO - 10.1002/pssc.201001230
M3 - Article
AN - SCOPUS:80053608099
VL - 8
SP - 3017
EP - 3020
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 10
ER -