Surface passivation of Cu cone bump by self-assembled-monolayer for room temperature Cu-Cu bonding

A. Ikeda; L. J. Qiu; K. Nakahara; Tanemasa Asano

doi:10.1109/3DIC.2013.6702317

Surface passivation of Cu cone bump by self-assembled-monolayer for room temperature Cu-Cu bonding

A. Ikeda, L. J. Qiu, K. Nakahara, Tanemasa Asano

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu-Cu room temperature bonding is investigated using Cu cone bumps with SAM passivation. Effect of the SAM passivation for preventing the Cu oxidation is confirmed by AES and water contact angle measurements. The contact resistance at the bump interconnection is kept small even with 24 hours storage in air after the SAM passivation. Also, the die shear strength of the bonded chip is enough high to satisfy the criterion of MIL-STD. According to these findings, we can conclude that the Cu cone bump with the SAM passivation is promising candidate for room temperature Cu-Cu bump interconnections.

Original language	English
Title of host publication	2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
DOIs	https://doi.org/10.1109/3DIC.2013.6702317
Publication status	Published - 2013
Event	2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 - San Francisco, CA, United States Duration: Oct 2 2013 → Oct 4 2013

Other

Other	2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
Country/Territory	United States
City	San Francisco, CA
Period	10/2/13 → 10/4/13

All Science Journal Classification (ASJC) codes

Computer Graphics and Computer-Aided Design
Computer Science Applications

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10.1109/3DIC.2013.6702317

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Ikeda, A, Qiu, LJ, Nakahara, K & Asano, T 2013, Surface passivation of Cu cone bump by self-assembled-monolayer for room temperature Cu-Cu bonding. in 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013., 6702317, 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013, San Francisco, CA, United States, 10/2/13. https://doi.org/10.1109/3DIC.2013.6702317

@inproceedings{19b55ea2ff0c4e3a9d7269e43195523b,

title = "Surface passivation of Cu cone bump by self-assembled-monolayer for room temperature Cu-Cu bonding",

abstract = "Cu-Cu room temperature bonding is investigated using Cu cone bumps with SAM passivation. Effect of the SAM passivation for preventing the Cu oxidation is confirmed by AES and water contact angle measurements. The contact resistance at the bump interconnection is kept small even with 24 hours storage in air after the SAM passivation. Also, the die shear strength of the bonded chip is enough high to satisfy the criterion of MIL-STD. According to these findings, we can conclude that the Cu cone bump with the SAM passivation is promising candidate for room temperature Cu-Cu bump interconnections.",

author = "A. Ikeda and Qiu, {L. J.} and K. Nakahara and Tanemasa Asano",

year = "2013",

doi = "10.1109/3DIC.2013.6702317",

language = "English",

isbn = "9781467364843",

booktitle = "2013 IEEE International 3D Systems Integration Conference, 3DIC 2013",

note = "2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 ; Conference date: 02-10-2013 Through 04-10-2013",

}

TY - GEN

T1 - Surface passivation of Cu cone bump by self-assembled-monolayer for room temperature Cu-Cu bonding

AU - Ikeda, A.

AU - Qiu, L. J.

AU - Nakahara, K.

AU - Asano, Tanemasa

PY - 2013

Y1 - 2013

N2 - Cu-Cu room temperature bonding is investigated using Cu cone bumps with SAM passivation. Effect of the SAM passivation for preventing the Cu oxidation is confirmed by AES and water contact angle measurements. The contact resistance at the bump interconnection is kept small even with 24 hours storage in air after the SAM passivation. Also, the die shear strength of the bonded chip is enough high to satisfy the criterion of MIL-STD. According to these findings, we can conclude that the Cu cone bump with the SAM passivation is promising candidate for room temperature Cu-Cu bump interconnections.

AB - Cu-Cu room temperature bonding is investigated using Cu cone bumps with SAM passivation. Effect of the SAM passivation for preventing the Cu oxidation is confirmed by AES and water contact angle measurements. The contact resistance at the bump interconnection is kept small even with 24 hours storage in air after the SAM passivation. Also, the die shear strength of the bonded chip is enough high to satisfy the criterion of MIL-STD. According to these findings, we can conclude that the Cu cone bump with the SAM passivation is promising candidate for room temperature Cu-Cu bump interconnections.

UR - http://www.scopus.com/inward/record.url?scp=84893912140&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893912140&partnerID=8YFLogxK

U2 - 10.1109/3DIC.2013.6702317

DO - 10.1109/3DIC.2013.6702317

M3 - Conference contribution

AN - SCOPUS:84893912140

SN - 9781467364843

BT - 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013

T2 - 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013

Y2 - 2 October 2013 through 4 October 2013

ER -

Surface passivation of Cu cone bump by self-assembled-monolayer for room temperature Cu-Cu bonding

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