Surface plasmon enhanced InGaN light emitter

Koichi Okamoto, Isamu Niki, Alexander Shvartser, George Maltezos, Yukio Narukawa, Takashi Mukai, Koji Nishizuka, Yoichi Kawakami, Axel Scherer

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

Original languageEnglish
Article number20
Pages (from-to)94-103
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5733
DOIs
Publication statusPublished - Jul 21 2005
EventPhotonic Crystal Materials and Devices III - San Jose, CA, United States
Duration: Jan 24 2005Jan 27 2005

Fingerprint

Surface Plasmons
InGaN
Surface Plasmon
Photoluminescence
Quantum Well
Plasmons
emitters
plasmons
Enhancement
Semiconductor quantum wells
quantum wells
photoluminescence
augmentation
Plasmon
Quantum Efficiency
Aluminum coatings
aluminum coatings
Silver
Temperature Dependence
Nanostructures

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Okamoto, K., Niki, I., Shvartser, A., Maltezos, G., Narukawa, Y., Mukai, T., ... Scherer, A. (2005). Surface plasmon enhanced InGaN light emitter. Proceedings of SPIE - The International Society for Optical Engineering, 5733, 94-103. [20]. https://doi.org/10.1117/12.592261

Surface plasmon enhanced InGaN light emitter. / Okamoto, Koichi; Niki, Isamu; Shvartser, Alexander; Maltezos, George; Narukawa, Yukio; Mukai, Takashi; Nishizuka, Koji; Kawakami, Yoichi; Scherer, Axel.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5733, 20, 21.07.2005, p. 94-103.

Research output: Contribution to journalConference article

Okamoto, K, Niki, I, Shvartser, A, Maltezos, G, Narukawa, Y, Mukai, T, Nishizuka, K, Kawakami, Y & Scherer, A 2005, 'Surface plasmon enhanced InGaN light emitter', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5733, 20, pp. 94-103. https://doi.org/10.1117/12.592261
Okamoto K, Niki I, Shvartser A, Maltezos G, Narukawa Y, Mukai T et al. Surface plasmon enhanced InGaN light emitter. Proceedings of SPIE - The International Society for Optical Engineering. 2005 Jul 21;5733:94-103. 20. https://doi.org/10.1117/12.592261
Okamoto, Koichi ; Niki, Isamu ; Shvartser, Alexander ; Maltezos, George ; Narukawa, Yukio ; Mukai, Takashi ; Nishizuka, Koji ; Kawakami, Yoichi ; Scherer, Axel. / Surface plasmon enhanced InGaN light emitter. In: Proceedings of SPIE - The International Society for Optical Engineering. 2005 ; Vol. 5733. pp. 94-103.
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AU - Mukai, Takashi

AU - Nishizuka, Koji

AU - Kawakami, Yoichi

AU - Scherer, Axel

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N2 - We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

AB - We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

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