Surface plasmon enhanced InGaN light emitter

Koichi Okamoto, Isamu Niki, Alexander Shvartser, George Maltezos, Yukio Narukawa, Takashi Mukai, Koji Nishizuka, Yoichi Kawakami, Axel Scherer

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

Original languageEnglish
Article number20
Pages (from-to)94-103
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5733
DOIs
Publication statusPublished - 2005
EventPhotonic Crystal Materials and Devices III - San Jose, CA, United States
Duration: Jan 24 2005Jan 27 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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