Surface plasmon enhanced InGaN light emitter

Koichi Okamoto; Isamu Niki; Alexander Shvartser; George Maltezos; Yukio Narukawa; Takashi Mukai; Koji Nishizuka; Yoichi Kawakami; Axel Scherer

doi:10.1117/12.592261

Surface plasmon enhanced InGaN light emitter

Koichi Okamoto, Isamu Niki, Alexander Shvartser, George Maltezos, Yukio Narukawa, Takashi Mukai, Koji Nishizuka, Yoichi Kawakami, Axel Scherer

Department of Fundamental Organic Chemistry

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In_0.3Ga_0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

Original language	English
Article number	20
Pages (from-to)	94-103
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5733
DOIs	https://doi.org/10.1117/12.592261
Publication status	Published - 2005
Event	Photonic Crystal Materials and Devices III - San Jose, CA, United States Duration: Jan 24 2005 → Jan 27 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.592261

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@article{2c72b7211f344643b9561bab16c98713,

title = "Surface plasmon enhanced InGaN light emitter",

abstract = "We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.",

author = "Koichi Okamoto and Isamu Niki and Alexander Shvartser and George Maltezos and Yukio Narukawa and Takashi Mukai and Koji Nishizuka and Yoichi Kawakami and Axel Scherer",

year = "2005",

doi = "10.1117/12.592261",

language = "English",

volume = "5733",

pages = "94--103",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Surface plasmon enhanced InGaN light emitter

AU - Okamoto, Koichi

AU - Niki, Isamu

AU - Shvartser, Alexander

AU - Maltezos, George

AU - Narukawa, Yukio

AU - Mukai, Takashi

AU - Nishizuka, Koji

AU - Kawakami, Yoichi

AU - Scherer, Axel

PY - 2005

Y1 - 2005

N2 - We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

AB - We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In0.3Ga0.7N QWs with 50 nm thick silver and aluminum coating with 10 nm GaN spacer. These PL enhancements can be attributed to strong interaction between QWs and surface plasmons (SPs). No such enhancements were obtained from samples coated with gold, as its well-known plasmon resonance occurs only at longer wavelengths. We also showed that QW-SP coupling increase the internal quantum efficiencies by measuring the temperature dependence of PL intensities. QW-SP coupling is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we found that the metal nano-structure is very important facto to decide the light extraction. A possible mechanism of QW-SP coupling and emission enhancement has been developed, and high-speed and efficient light emission is predicted for optically as well as electrically pumped light emitters.

UR - http://www.scopus.com/inward/record.url?scp=21844435742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844435742&partnerID=8YFLogxK

U2 - 10.1117/12.592261

DO - 10.1117/12.592261

M3 - Conference article

AN - SCOPUS:21844435742

SN - 0277-786X

VL - 5733

SP - 94

EP - 103

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 20

T2 - Photonic Crystal Materials and Devices III

Y2 - 24 January 2005 through 27 January 2005

ER -

Surface plasmon enhanced InGaN light emitter

Abstract

All Science Journal Classification (ASJC) codes

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