Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Koichi Okamoto; Isamu Niki; Alexander Shvartser; Yukio Narukawa; Takashi Mukai; Axel Scherer

doi:10.1038/nmat1198

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Koichi Okamoto, Isamu Niki, Alexander Shvartser, Yukio Narukawa, Takashi Mukai, Axel Scherer

Research output: Contribution to journal › Article › peer-review

1456 Citations (Scopus)

Abstract

The surface-plasmon-enhanced light emitters based on indium gallium nitride quantum wells are discussed. The surface plasmons (SP) can increase the density of states and the spontaneous emisson rate in the semiconductors. Large enhancement of the internal quantum efficiencies are measured when silver or aluminium layers are deposited 10 nm above InGaN light emitting layer. The result shows that the use of SPs leads to a new class of very bright LEDs and highly efficient solid-state light sources.

Original language	English
Pages (from-to)	601-605
Number of pages	5
Journal	Nature Materials
Volume	3
Issue number	9
DOIs	https://doi.org/10.1038/nmat1198
Publication status	Published - Sept 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1038/nmat1198

Cite this

@article{18c15400906141d4b3e112146d786f95,

title = "Surface-plasmon-enhanced light emitters based on InGaN quantum wells",

abstract = "The surface-plasmon-enhanced light emitters based on indium gallium nitride quantum wells are discussed. The surface plasmons (SP) can increase the density of states and the spontaneous emisson rate in the semiconductors. Large enhancement of the internal quantum efficiencies are measured when silver or aluminium layers are deposited 10 nm above InGaN light emitting layer. The result shows that the use of SPs leads to a new class of very bright LEDs and highly efficient solid-state light sources.",

author = "Koichi Okamoto and Isamu Niki and Alexander Shvartser and Yukio Narukawa and Takashi Mukai and Axel Scherer",

note = "Funding Information: The authors wish to thank the US Air Force Office for Scientific Research for their support under contract F49620-03-1-0418. Correspondence and requests for materials should be addressed to A.S.",

year = "2004",

month = sep,

doi = "10.1038/nmat1198",

language = "English",

volume = "3",

pages = "601--605",

journal = "Nature Materials",

issn = "1476-1122",

publisher = "Nature Publishing Group",

number = "9",

}

TY - JOUR

T1 - Surface-plasmon-enhanced light emitters based on InGaN quantum wells

AU - Okamoto, Koichi

AU - Niki, Isamu

AU - Shvartser, Alexander

AU - Narukawa, Yukio

AU - Mukai, Takashi

AU - Scherer, Axel

N1 - Funding Information: The authors wish to thank the US Air Force Office for Scientific Research for their support under contract F49620-03-1-0418. Correspondence and requests for materials should be addressed to A.S.

PY - 2004/9

Y1 - 2004/9

N2 - The surface-plasmon-enhanced light emitters based on indium gallium nitride quantum wells are discussed. The surface plasmons (SP) can increase the density of states and the spontaneous emisson rate in the semiconductors. Large enhancement of the internal quantum efficiencies are measured when silver or aluminium layers are deposited 10 nm above InGaN light emitting layer. The result shows that the use of SPs leads to a new class of very bright LEDs and highly efficient solid-state light sources.

AB - The surface-plasmon-enhanced light emitters based on indium gallium nitride quantum wells are discussed. The surface plasmons (SP) can increase the density of states and the spontaneous emisson rate in the semiconductors. Large enhancement of the internal quantum efficiencies are measured when silver or aluminium layers are deposited 10 nm above InGaN light emitting layer. The result shows that the use of SPs leads to a new class of very bright LEDs and highly efficient solid-state light sources.

UR - http://www.scopus.com/inward/record.url?scp=4444260457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444260457&partnerID=8YFLogxK

U2 - 10.1038/nmat1198

DO - 10.1038/nmat1198

M3 - Article

C2 - 15322535

AN - SCOPUS:4444260457

SN - 1476-1122

VL - 3

SP - 601

EP - 605

JO - Nature Materials

JF - Nature Materials

IS - 9

ER -

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this