Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Koichi Okamoto, Isamu Niki, Alexander Shvartser, Yukio Narukawa, Takashi Mukai, Axel Scherer

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1318 Citations (Scopus)

Abstract

The surface-plasmon-enhanced light emitters based on indium gallium nitride quantum wells are discussed. The surface plasmons (SP) can increase the density of states and the spontaneous emisson rate in the semiconductors. Large enhancement of the internal quantum efficiencies are measured when silver or aluminium layers are deposited 10 nm above InGaN light emitting layer. The result shows that the use of SPs leads to a new class of very bright LEDs and highly efficient solid-state light sources.

Original languageEnglish
Pages (from-to)601-605
Number of pages5
JournalNature Materials
Volume3
Issue number9
DOIs
Publication statusPublished - Sep 2004

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Okamoto, K., Niki, I., Shvartser, A., Narukawa, Y., Mukai, T., & Scherer, A. (2004). Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nature Materials, 3(9), 601-605. https://doi.org/10.1038/nmat1198