Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells

Koichi Okamoto, Isamu Niki, Alexander Shvartser, Yukio Narukawa, Takashi Mukai, Axel Scherer

Research output: Contribution to journalConference article

Abstract

We report a dramatic increase in the light emitting efficiency of InGaN/ GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples.

Original languageEnglish
Pages (from-to)1283-1284
Number of pages2
JournalOSA Trends in Optics and Photonics Series
Volume96 A
Publication statusPublished - Jan 1 2004
EventConference on Lasers and Electro-Optics, CLEO - Washington, DC, United States
Duration: May 17 2004May 19 2004

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Okamoto, K., Niki, I., Shvartser, A., Narukawa, Y., Mukai, T., & Scherer, A. (2004). Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells. OSA Trends in Optics and Photonics Series, 96 A, 1283-1284.