Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

Koichi Okamoto, Isamu Niki, Axel Scherer, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami

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334 Citations (Scopus)

Abstract

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.

Original languageEnglish
Article number071102
JournalApplied Physics Letters
Volume87
Issue number7
DOIs
Publication statusPublished - Aug 15 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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