Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

Koichi Okamoto; Isamu Niki; Axel Scherer; Yukio Narukawa; Takashi Mukai; Yoichi Kawakami

doi:10.1063/1.2010602

Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

Koichi Okamoto, Isamu Niki, Axel Scherer, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami

Research output: Contribution to journal › Article › peer-review

351 Citations (Scopus)

Abstract

We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.

Original language	English
Article number	071102
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.2010602
Publication status	Published - Aug 15 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2010602

Cite this

@article{74cbbf9591ab4715bd7393dcf734cb1e,

title = "Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy",

abstract = "We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.",

author = "Koichi Okamoto and Isamu Niki and Axel Scherer and Yukio Narukawa and Takashi Mukai and Yoichi Kawakami",

note = "Funding Information: The authors wish to thank Mr. A. Shvartser (Caltech) and Mr. K. Nishizuka (Kyoto University) for helping with the measurements. We also thank Professor H. Everitt (Duke Univ.) and Dr. J. Schilling (Caltech) for valuable discussions. A part of this study was supported by AFOSR for their support under Contract No. FA9550–04–1–0413.",

year = "2005",

month = aug,

day = "15",

doi = "10.1063/1.2010602",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

AU - Okamoto, Koichi

AU - Niki, Isamu

AU - Scherer, Axel

AU - Narukawa, Yukio

AU - Mukai, Takashi

AU - Kawakami, Yoichi

N1 - Funding Information: The authors wish to thank Mr. A. Shvartser (Caltech) and Mr. K. Nishizuka (Kyoto University) for helping with the measurements. We also thank Professor H. Everitt (Duke Univ.) and Dr. J. Schilling (Caltech) for valuable discussions. A part of this study was supported by AFOSR for their support under Contract No. FA9550–04–1–0413.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.

AB - We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emission rates and intensities resulting from the efficient energy transfer from electron-hole pair recombination in the QW to electron vibrations of SPs at the metal-coated surface of the semiconductor heterostructure. This QW-SP coupling is expected to lead to a new class of super bright and high-speed light-emitting diodes (LEDs) that offer realistic alternatives to conventional fluorescent tubes.

UR - http://www.scopus.com/inward/record.url?scp=24144470510&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24144470510&partnerID=8YFLogxK

U2 - 10.1063/1.2010602

DO - 10.1063/1.2010602

M3 - Article

AN - SCOPUS:24144470510

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071102

ER -

Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

Abstract

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