Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

Ken Watanabe, Dong Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi

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Abstract

An isotope tracer study, i.e., 18O/16O exchange using 18O2 and H218O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium-gallium-zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for 18O2 than for H218O. PDA in a humid atmosphere at 400°C further suppressed the reactivity of O2 at the a-IGZO film surface, which is attributable to -OH-terminated surface formation.

Original languageEnglish
Article number201904
JournalApplied Physics Letters
Volume103
Issue number20
DOIs
Publication statusPublished - Nov 11 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Watanabe, K., Lee, D. H., Sakaguchi, I., Nomura, K., Kamiya, T., Haneda, H., Hosono, H., & Ohashi, N. (2013). Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere. Applied Physics Letters, 103(20), [201904]. https://doi.org/10.1063/1.4829996