TY - JOUR
T1 - Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere
AU - Watanabe, Ken
AU - Lee, Dong Hee
AU - Sakaguchi, Isao
AU - Nomura, Kenji
AU - Kamiya, Toshio
AU - Haneda, Hajime
AU - Hosono, Hideo
AU - Ohashi, Naoki
N1 - Funding Information:
This study was performed at the Tokodai Institute for Elemental Strategy (TIES), funded by the Ministry of Education, Culture, Science, and Technology (MEXT), Japan. K.W. acknowledges support from the Center for Materials Nanoarchitectonics (MANA), promoted by the World Premier Research Institute Program, which is funded by MEXT, Japan. T.K. was supported by the Funding Program for Next Generation World-Leading Researchers (NEXT Program, Project No. GR035).
PY - 2013/11/11
Y1 - 2013/11/11
N2 - An isotope tracer study, i.e., 18O/16O exchange using 18O2 and H218O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium-gallium-zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for 18O2 than for H218O. PDA in a humid atmosphere at 400°C further suppressed the reactivity of O2 at the a-IGZO film surface, which is attributable to -OH-terminated surface formation.
AB - An isotope tracer study, i.e., 18O/16O exchange using 18O2 and H218O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium-gallium-zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for 18O2 than for H218O. PDA in a humid atmosphere at 400°C further suppressed the reactivity of O2 at the a-IGZO film surface, which is attributable to -OH-terminated surface formation.
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U2 - 10.1063/1.4829996
DO - 10.1063/1.4829996
M3 - Article
AN - SCOPUS:84889643092
SN - 0003-6951
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 20
M1 - 201904
ER -