Effects of artificial pinning centers (APCs) into ErBa2Cu3O7-δ films are discussed. The APCs used in this paper is BaZrO3 and Zn which are mixed into ErBa2Cu3O7-δ ceramic targets. The targets with various contents of APCs are ablated and films are grown on substrates with the APCs. X-ray diffraction patterns show there are no other phases than ErBa2Cu3O7-δ and APCs. Transmission electron microscopy (TEM) shows the BaZrO3 APSs grow along the c-axis of the films. The introduction of APCs decreases surface resistance (RS) of ErBa2Cu3O7-δ films and increases critical current density (JC) of the films. RS measurements revealed that the ErBa2Cu3O7-δ films with APCs showed a lower RS than that of the ErBa2Cu3O7-δ films without APCs.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering