The growth and characterization of a BaZrO3 buffer layer for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates is described. BaZrO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries typically exist in YBa2Cu3O7-δ films grown on MgO(001) substrates; these are fatal defects for microwave device applications and are eliminated using the BaZrO3 buffer layer. The preferred orientation and in-plane orientation with respect to the MgO substrates are estimated for MgO lattice-matched BaZrO3 buffer layers grown on MgO substrates. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaZrO3 buffer layers on MgO(001) substrates show a lower surface resistance (RS) than those on MgO(001) substrates without BaZrO3 buffer layers.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry