Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging

Amanda Youssef, Jonas Schon, Tim Niewelt, Sebastian Mack, Sungeun Park, Kazuo Nakajima, Kohei Morishita, Ryota Murai, Mallory A. Jensen, Tonio Buonassisi, Martin C. Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1303-1307
Number of pages5
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Fingerprint

Photoluminescence
Imaging techniques
Defects
Crucibles
Temperature
Oxygen
Rapid thermal annealing
Crystal growth
Precipitates

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Youssef, A., Schon, J., Niewelt, T., Mack, S., Park, S., Nakajima, K., ... Schubert, M. C. (2016). Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1303-1307). [7749826] (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749826

Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging. / Youssef, Amanda; Schon, Jonas; Niewelt, Tim; Mack, Sebastian; Park, Sungeun; Nakajima, Kazuo; Morishita, Kohei; Murai, Ryota; Jensen, Mallory A.; Buonassisi, Tonio; Schubert, Martin C.

2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1303-1307 7749826 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Youssef, A, Schon, J, Niewelt, T, Mack, S, Park, S, Nakajima, K, Morishita, K, Murai, R, Jensen, MA, Buonassisi, T & Schubert, MC 2016, Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749826, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1303-1307, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749826
Youssef A, Schon J, Niewelt T, Mack S, Park S, Nakajima K et al. Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1303-1307. 7749826. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2016.7749826
Youssef, Amanda ; Schon, Jonas ; Niewelt, Tim ; Mack, Sebastian ; Park, Sungeun ; Nakajima, Kazuo ; Morishita, Kohei ; Murai, Ryota ; Jensen, Mallory A. ; Buonassisi, Tonio ; Schubert, Martin C. / Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1303-1307 (Conference Record of the IEEE Photovoltaic Specialists Conference).
@inproceedings{a13d1eb8fe134586b2140baefb631ab4,
title = "Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging",
abstract = "The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.",
author = "Amanda Youssef and Jonas Schon and Tim Niewelt and Sebastian Mack and Sungeun Park and Kazuo Nakajima and Kohei Morishita and Ryota Murai and Jensen, {Mallory A.} and Tonio Buonassisi and Schubert, {Martin C.}",
year = "2016",
month = "11",
day = "18",
doi = "10.1109/PVSC.2016.7749826",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1303--1307",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",

}

TY - GEN

T1 - Swirl defect investigation using temperature- and injection-dependent photoluminescence imaging

AU - Youssef, Amanda

AU - Schon, Jonas

AU - Niewelt, Tim

AU - Mack, Sebastian

AU - Park, Sungeun

AU - Nakajima, Kazuo

AU - Morishita, Kohei

AU - Murai, Ryota

AU - Jensen, Mallory A.

AU - Buonassisi, Tonio

AU - Schubert, Martin C.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.

AB - The swirl defect is observed in both n-type Czochralski (Cz) and non-contact crucible (NOC) Si wafers. It is postulated to be the outcome of oxygen precipitation during crystal growth and/or post-growth high temperature processes, specifically processes involving temperatures in the range of 800°C-1000°C. This defect is characterized by low lifetime ring-like regions that decrease the device performance. We employ a technique based on temperature- and injection-dependent photoluminescence imaging (TIDPLI) to characterize the swirl defect. We compare the calculated fingerprints of the defects responsible for the swirl pattern observed in both Cz and NOC-Si wafers to determine whether the swirls are caused by the same defect. We find significantly different defect fingerprints for the swirl defects in n-type Cz and NOC-Si. The Shockley-Read-Hall (SRH) description of the Cz-Si defects differ not much from the SRH description of intentionally grown oxygen precipitates, whereas the SRH parameters for the NOC-Si defects differ significantly. Identifying the limiting defect, allows us to suggest methods for its annihilation. We then successfully apply a rapid thermal annealing treatment to dissolve swirl defects in Cz-Si samples and homogenize the lifetime.

UR - http://www.scopus.com/inward/record.url?scp=85003583769&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003583769&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749826

DO - 10.1109/PVSC.2016.7749826

M3 - Conference contribution

AN - SCOPUS:85003583769

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1303

EP - 1307

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -