Switching behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique

H. Oishi; Y. Nozaki; K. Matsuyama

doi:10.1063/1.1544450

Switching behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique

H. Oishi, Y. Nozaki, K. Matsuyama

Electronic Devices

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The magnetic behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique was studied. The multilayer pillars with various layer structures and a lateral dimension were embedded between orthogonal top and bottom electrodes. The results showed that the different switching field of Co layers were attributed to the variation of the dipole fields at each layer.

Original language	English
Pages (from-to)	7613-7615
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 2
DOIs	https://doi.org/10.1063/1.1544450
Publication status	Published - May 15 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1544450

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title = "Switching behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique",

abstract = "The magnetic behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique was studied. The multilayer pillars with various layer structures and a lateral dimension were embedded between orthogonal top and bottom electrodes. The results showed that the different switching field of Co layers were attributed to the variation of the dipole fields at each layer.",

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AU - Oishi, H.

AU - Nozaki, Y.

AU - Matsuyama, K.

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Y1 - 2003/5/15

N2 - The magnetic behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique was studied. The multilayer pillars with various layer structures and a lateral dimension were embedded between orthogonal top and bottom electrodes. The results showed that the different switching field of Co layers were attributed to the variation of the dipole fields at each layer.

AB - The magnetic behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique was studied. The multilayer pillars with various layer structures and a lateral dimension were embedded between orthogonal top and bottom electrodes. The results showed that the different switching field of Co layers were attributed to the variation of the dipole fields at each layer.

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Switching behavior of cross contacting current perpendicular to plane giant magnetoresistance structure fabricated by two-step ion milling technique

Abstract

All Science Journal Classification (ASJC) codes

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