Switching controllability of high voltage GaN-HEMTs and the cascode connection

Wataru Saito, Yasunobu Saito, Hidetoshi Fujimoto, Akira Yoshioka, Tetsuya Ohno, Toshiyuki Naka, Toru Sugiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper reports that the switching controllability of high-voltage GaN-HEMTs and the cascode connection depends on the feedback capacitance design. The switching behavior of the GaN-HEMT can be controlled by the external gate resistance as the same manner as the conventional Si-MOSFETs. The switching controllability was improved by the substrate connection due to the parasitic capacitance change. The controllability of the cascode connection was slightly worse compared with the Si-MOSFET, because the effective feedback capacitance became small by the step by step switching operation.

Original languageEnglish
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Pages229-232
Number of pages4
DOIs
Publication statusPublished - Aug 8 2012
Externally publishedYes
Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium
Duration: Jun 3 2012Jun 7 2012

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
CountryBelgium
CityBruges
Period6/3/126/7/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Saito, W., Saito, Y., Fujimoto, H., Yoshioka, A., Ohno, T., Naka, T., & Sugiyama, T. (2012). Switching controllability of high voltage GaN-HEMTs and the cascode connection. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 229-232). [6229065] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229065