Switching kinetics of pulsed laser deposited epitaxial PZT films

M. Yamazato, A. M. Grishin, Y. Yamagata, T. Ikegami, K. Ebihara

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


We have fabricated epitaxial PbZr0.52Ti0.48O3 (PZT, 40 approximately 1200 nm)/YBa2Cu3O7-x (YBCO, 400 nm) film ferroelectric/superconductor heterostructures on the single-crystal neodymium doped yttrium monoaluminate [YAlO3+1%Nd2O3] and MgO substrates by KrF pulsed laser deposition technique. The dielectric constant of 950 and loss tangent δ of 0.04 have been found to be frequency independent in the range 100 Hz to 100 kHz while electric resistivity ρ (150 kV/cm) is of 6×1011 Ω·cm, remnant polarization and coercive field are 32 μC/cm2 and 43 kV/cm, respectively. Fast ferroelectric switching kinetics with characteristic switching time around 50 ns has been observed. Universal electric field and temperature dependencies of switching time as well as film thickness dependence of coercive electric field have been observed and correspond to ferroelectric needle-like domain switching.

Original languageEnglish
Pages (from-to)187-191
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 16 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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