Switching Noise-Loss Trade-Off Improvement of SJ-IGBTs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Design of trench gate and p-column position in Superjunction (SJ)-IGBTs are discussed to improve the tradeoff characteristics between surge voltage/current and turn-off/on losses. Power electronics systems require not only low power loss but also low EMI noise for high cost performance by system downsizing. Although SJ-IGBTs are attractive for low loss operation due to thin drift layer and fast removal of the excess carriers through the p- and n-columns at the turnoff operation, the switching trade-off characteristics of SJIGBTs compared with the conventional IGBT and the improvement design have not been discussed sufficiently. This paper shows better switching trade-off compared with a conventional IGBT can be obtained by the trench gate and p-column designs due to management of the gate capacitance and hole current flow, because negative gate capacitance influences on not only turn-on switching but also turn-off switching.

Original languageEnglish
Title of host publication2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages53-56
Number of pages4
ISBN (Electronic)9781665422017
DOIs
Publication statusPublished - 2022
Event34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada
Duration: May 22 2022May 25 2022

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2022-May
ISSN (Print)1063-6854

Conference

Conference34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Country/TerritoryCanada
CityVancouver
Period5/22/225/25/22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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