Synchrotron X-ray diffraction study of single-phase β-AIN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition

Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, You Nakagawa, Satoshi Mohri, Tsuyoshi Yoshitake

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    Abstract

    β-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A θ-2θ measurement suggested that single-phase β-AlN was grown. From measurements of β-AlN 111 diffraction spots, it was found that β-AlN with a lattice constant of 7:90 ± 0:06 Å was heteroepitaxially grown on the substrate with a relationship of β-AlN(111)[121] || Al2O 3(0001)[1120]. The film was composed of highly-oriented β-AlN crystallites with an average diameter of about 100Å

    Original languageEnglish
    Article number020212
    JournalJapanese journal of applied physics
    Volume49
    Issue number2 Part 1
    DOIs
    Publication statusPublished - Feb 1 2010

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    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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