Synchrotron X-ray diffraction study of single-phase β-AIN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition

Kazushi Sumitani; Ryota Ohtani; Tomohiro Yoshida; You Nakagawa; Satoshi Mohri; Tsuyoshi Yoshitake

doi:10.1143/JJAP.49.020212

Synchrotron X-ray diffraction study of single-phase β-AIN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition

Kazushi Sumitani, Ryota Ohtani, Tomohiro Yoshida, You Nakagawa, Satoshi Mohri, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

β-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A θ-2θ measurement suggested that single-phase β-AlN was grown. From measurements of β-AlN 111 diffraction spots, it was found that β-AlN with a lattice constant of 7:90 ± 0:06 Å was heteroepitaxially grown on the substrate with a relationship of β-AlN(111)[121] || Al₂O ₃(0001)[1120]. The film was composed of highly-oriented β-AlN crystallites with an average diameter of about 100Å

Original language	English
Article number	020212
Journal	Japanese journal of applied physics
Volume	49
Issue number	2 Part 1
DOIs	https://doi.org/10.1143/JJAP.49.020212
Publication status	Published - Feb 1 2010

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Synchrotron X-ray diffraction study of single-phase β-AIN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition",

abstract = "β-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A θ-2θ measurement suggested that single-phase β-AlN was grown. From measurements of β-AlN 111 diffraction spots, it was found that β-AlN with a lattice constant of 7:90 ± 0:06 {\AA} was heteroepitaxially grown on the substrate with a relationship of β-AlN(111)[121] || Al2O 3(0001)[1120]. The film was composed of highly-oriented β-AlN crystallites with an average diameter of about 100{\AA}",

author = "Kazushi Sumitani and Ryota Ohtani and Tomohiro Yoshida and You Nakagawa and Satoshi Mohri and Tsuyoshi Yoshitake",

year = "2010",

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doi = "10.1143/JJAP.49.020212",

language = "English",

volume = "49",

journal = "Japanese Journal of Applied Physics",

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T1 - Synchrotron X-ray diffraction study of single-phase β-AIN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition

AU - Sumitani, Kazushi

AU - Ohtani, Ryota

AU - Yoshida, Tomohiro

AU - Nakagawa, You

AU - Mohri, Satoshi

AU - Yoshitake, Tsuyoshi

PY - 2010/2/1

Y1 - 2010/2/1

N2 - β-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A θ-2θ measurement suggested that single-phase β-AlN was grown. From measurements of β-AlN 111 diffraction spots, it was found that β-AlN with a lattice constant of 7:90 ± 0:06 Å was heteroepitaxially grown on the substrate with a relationship of β-AlN(111)[121] || Al2O 3(0001)[1120]. The film was composed of highly-oriented β-AlN crystallites with an average diameter of about 100Å

AB - β-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A θ-2θ measurement suggested that single-phase β-AlN was grown. From measurements of β-AlN 111 diffraction spots, it was found that β-AlN with a lattice constant of 7:90 ± 0:06 Å was heteroepitaxially grown on the substrate with a relationship of β-AlN(111)[121] || Al2O 3(0001)[1120]. The film was composed of highly-oriented β-AlN crystallites with an average diameter of about 100Å

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Synchrotron X-ray diffraction study of single-phase β-AIN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition

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