Synthesis and characterization of ZnInON semiconductor: A ZnO-based compound with tunable band gap

N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani

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Abstract

We have synthesized ZnInON (ZION) semiconductor, a ZnO-based compound with tunable band gap, by radio-frequency magnetron sputtering on quartz glass, a-SiO2/Si, and GaN/Al2O3 templates. From XRD analysis using wide-range reciprocal-space mapping, ZION is deduced to be a pseudo-binary system of wurtzite ZnO and wurtzite InN, the c-axis lattice parameter of which varies continuously from 0.53 to 0.58 nm with decreasing the chemical composition ratio [Zn]/([Zn] + [In]). From optical measurements, we found that ZION has tunability of the band gap over the entire visible spectrum, and the photo-to-dark conductivity ratio is high, of 2.2 × 103, demonstrating the high photosensitivity of ZION films. We have also succeeded in the epitaxial growth of ZION films with the composition ratio (InN)/(ZnO) of about 50 at.% by using GaN templates, where the FWHM of the ZION (002) rocking curve is small, of 350 arcsec. These results allow us to conclude that ZION will open up the field of group II-III-V-VI semiconductors that offer new opportunities for design of optoelectronic devices.

Original languageEnglish
Article number036405
JournalMaterials Research Express
Volume1
Issue number3
DOIs
Publication statusPublished - Sep 2014

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

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