TY - JOUR
T1 - Synthesis and characterization of ZnInON semiconductor
T2 - A ZnO-based compound with tunable band gap
AU - Itagaki, N.
AU - Matsushima, K.
AU - Yamashita, D.
AU - Seo, H.
AU - Koga, K.
AU - Shiratani, M.
N1 - Funding Information:
This work was supported in part by the Japan Society for the Promotion of Science Grants-in- Aid for Scientific Research No. 25630127, the Japan Science and Technology Agency (PRESTO), and the Foundation for Promotion of Material Science and Technology of Japan.
Publisher Copyright:
© 2014 IOP Publishing Ltd.
PY - 2014/9
Y1 - 2014/9
N2 - We have synthesized ZnInON (ZION) semiconductor, a ZnO-based compound with tunable band gap, by radio-frequency magnetron sputtering on quartz glass, a-SiO2/Si, and GaN/Al2O3 templates. From XRD analysis using wide-range reciprocal-space mapping, ZION is deduced to be a pseudo-binary system of wurtzite ZnO and wurtzite InN, the c-axis lattice parameter of which varies continuously from 0.53 to 0.58 nm with decreasing the chemical composition ratio [Zn]/([Zn] + [In]). From optical measurements, we found that ZION has tunability of the band gap over the entire visible spectrum, and the photo-to-dark conductivity ratio is high, of 2.2 × 103, demonstrating the high photosensitivity of ZION films. We have also succeeded in the epitaxial growth of ZION films with the composition ratio (InN)/(ZnO) of about 50 at.% by using GaN templates, where the FWHM of the ZION (002) rocking curve is small, of 350 arcsec. These results allow us to conclude that ZION will open up the field of group II-III-V-VI semiconductors that offer new opportunities for design of optoelectronic devices.
AB - We have synthesized ZnInON (ZION) semiconductor, a ZnO-based compound with tunable band gap, by radio-frequency magnetron sputtering on quartz glass, a-SiO2/Si, and GaN/Al2O3 templates. From XRD analysis using wide-range reciprocal-space mapping, ZION is deduced to be a pseudo-binary system of wurtzite ZnO and wurtzite InN, the c-axis lattice parameter of which varies continuously from 0.53 to 0.58 nm with decreasing the chemical composition ratio [Zn]/([Zn] + [In]). From optical measurements, we found that ZION has tunability of the band gap over the entire visible spectrum, and the photo-to-dark conductivity ratio is high, of 2.2 × 103, demonstrating the high photosensitivity of ZION films. We have also succeeded in the epitaxial growth of ZION films with the composition ratio (InN)/(ZnO) of about 50 at.% by using GaN templates, where the FWHM of the ZION (002) rocking curve is small, of 350 arcsec. These results allow us to conclude that ZION will open up the field of group II-III-V-VI semiconductors that offer new opportunities for design of optoelectronic devices.
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U2 - 10.1088/2053-1591/1/3/036405
DO - 10.1088/2053-1591/1/3/036405
M3 - Article
AN - SCOPUS:84931861406
SN - 2053-1591
VL - 1
JO - Materials Research Express
JF - Materials Research Express
IS - 3
M1 - 036405
ER -