Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices

Jared J. Hou, Ning Han, Fengyun Wang, Fei Xiu, Senpo Yip, Alvin T. Hui, Takfu Hung, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

Abstract

InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO 2/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I ON/I OFF ratio >10 5, field-effect mobility of ∼2700 cm 2/ (V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.

Original languageEnglish
Pages (from-to)3624-3630
Number of pages7
JournalACS nano
Volume6
Issue number4
DOIs
Publication statusPublished - Apr 24 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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