Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant source

Takeyasu Saito, Masanori Kameta, Katsuki Kusakabe, Shigeharu Morooka, Hideaki Maeda, Yasunori Hayashi, Tanemasa Asano

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23 Citations (Scopus)

Abstract

A phosphorus-doped (111) diamond film was formed homoepitaxially on a nondoped diamond film, which was also formed homoepitaxially on a type Ib (111) diamond substrate, by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source and triethylphosphine (TEP, P(C2H5)3) as the dopant source. The P-doped film, which was approximately 800 nm in thickness, exhibited an n-type conduction in the temperature range of 100-500 K. This represents the first such observation, for a film prepared using TEP as the dopant. The activation energy for carrier concentration was 0.09 eV in the range of 145-500 K. The Hall mobility reached a maximum of approximately 3.5 cm2/(V·s) at 145 K and decreased to 0.15 cm2/(V·s) at 500 K. Phosphorus was uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry.

Original languageEnglish
Pages (from-to)L543-L546
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number5 PART A
DOIs
Publication statusPublished - May 1 1998

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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