A phosphorus-doped (111) diamond film was formed homoepitaxially on a nondoped diamond film, which was also formed homoepitaxially on a type Ib (111) diamond substrate, by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source and triethylphosphine (TEP, P(C2H5)3) as the dopant source. The P-doped film, which was approximately 800 nm in thickness, exhibited an n-type conduction in the temperature range of 100-500 K. This represents the first such observation, for a film prepared using TEP as the dopant. The activation energy for carrier concentration was 0.09 eV in the range of 145-500 K. The Hall mobility reached a maximum of approximately 3.5 cm2/(V·s) at 145 K and decreased to 0.15 cm2/(V·s) at 500 K. Phosphorus was uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 PART A|
|Publication status||Published - May 1 1998|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)