Synthesis, characterization and device applications of InGaAs nanowires

Jared J. Hou; Ning Han; Fengyun Wang; Sen Po Yip; Fei Xiu; Tak Fu Hung; Johnny C. Ho

doi:10.1149/05006.0179ecst

Synthesis, characterization and device applications of InGaAs nanowires

Jared J. Hou, Ning Han, Fengyun Wang, Sen Po Yip, Fei Xiu, Tak Fu Hung, Johnny C. Ho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (∼106) and electron mobility (∼1300 cm²/Vs), which could be utilized in future integrated circuits.

Original language	English
Title of host publication	Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Publisher	Electrochemical Society Inc.
Pages	179-185
Number of pages	7
Edition	6
ISBN (Print)	9781607683544
DOIs	https://doi.org/10.1149/05006.0179ecst
Publication status	Published - 2013
Externally published	Yes
Event	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States Duration: Oct 7 2012 → Oct 12 2012

Publication series

Name	ECS Transactions
Number	6
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/7/12 → 10/12/12

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/05006.0179ecst

Cite this

Hou, J. J., Han, N., Wang, F., Yip, S. P., Xiu, F., Hung, T. F., & Ho, J. C. (2013). Synthesis, characterization and device applications of InGaAs nanowires. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., pp. 179-185). (ECS Transactions; Vol. 50, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/05006.0179ecst

Synthesis, characterization and device applications of InGaAs nanowires. / Hou, Jared J.; Han, Ning; Wang, Fengyun et al.

Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. Electrochemical Society Inc., 2013. p. 179-185 (ECS Transactions; Vol. 50, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hou, JJ, Han, N, Wang, F, Yip, SP, Xiu, F, Hung, TF & Ho, JC 2013, Synthesis, characterization and device applications of InGaAs nanowires. in Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 edn, ECS Transactions, no. 6, vol. 50, Electrochemical Society Inc., pp. 179-185, Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05006.0179ecst

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abstract = "As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (∼106) and electron mobility (∼1300 cm2/Vs), which could be utilized in future integrated circuits.",

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AU - Hung, Tak Fu

AU - Ho, Johnny C.

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AB - As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (∼106) and electron mobility (∼1300 cm2/Vs), which could be utilized in future integrated circuits.

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ER -

Synthesis, characterization and device applications of InGaAs nanowires

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