Synthesis of cubic boron nitride films with mean ion energies of a few eV

Kungen Teii, Ryota Yamao, Toshifumi Yamamura, Seiichiro Matsumoto

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27 Citations (Scopus)

Abstract

The lowest threshold energy of ion bombardment for cubic boron nitride (cBN) film deposition is presented. cBN films are prepared on positively biased Si (100) substrates from boron trifluoride (B F3) gas in the high-density source region of an inductively coupled plasma with mean ion impact energies from 45 down to a few eV or less. The great decrease in the threshold ion energy is mainly attributed to specific chemical effects of fluorine as well as high ion-to-boron flux ratios. The results show evidence for the existence of a way to deposit cBN films through quasistatic chemical processes under ultralow-energy ion impact.

Original languageEnglish
Article number033301
JournalJournal of Applied Physics
Volume101
Issue number3
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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