Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition

Teppei Nakashima, Toshifumi Kikuchi, Kaname Imokawa, Daisuke Nakamura, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed that germanium-tin (GeSn) particles with high substitutional Sn concentrations can be synthesized by pulsed laser deposition (PLD) in ambient Ar at low pressure (∼100 Pa). In this method, a Ge0.9Sn0.1 target is ablated by KrF excimer laser irradiation. At low Ar pressure (∼100 Pa), the agglomeration of Ge and Sn atoms occurs easily in ambient Ar, and the agglomerated particles are rapidly cooled by collision with Ar atoms. An Si-receiving substrate was placed in front of the target. Various GeSn particles from several 100 nm to approximately 20 μm with spherical, disk, and irregular shapes were deposited on the Si-receiving substrate. In Raman spectra, the Ge-Ge vibration peaks of all the particles were shifted to lower wavenumbers compared with those of the Ge(100) crystal. The Raman peak position reportedly shifts to lower wavenumbers with increased substitutional Sn concentration in crystalline Ge. Thus, GeSn crystal particles with over 10% substituted Sn atoms can be synthesized by low-pressure PLD.

Original languageEnglish
Title of host publicationSynthesis and Photonics of Nanoscale Materials XVI
EditorsDavid B. Geohegan, Jan J. Dubowski, Andrei V. Kabashin
PublisherSPIE
ISBN (Electronic)9781510624566
DOIs
Publication statusPublished - Jan 1 2019
EventSynthesis and Photonics of Nanoscale Materials XVI 2019 - San Francisco, United States
Duration: Feb 2 2019Feb 3 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10907
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSynthesis and Photonics of Nanoscale Materials XVI 2019
CountryUnited States
CitySan Francisco
Period2/2/192/3/19

Fingerprint

Pulsed Laser Deposition
Pulsed laser deposition
pulsed laser deposition
Synthesis
Atoms
synthesis
low pressure
Germanium
Crystals
Tin
Excimer lasers
Substrates
Laser beam effects
Crystal
Substrate
Raman scattering
disks (shapes)
atoms
Agglomeration
Excimer Laser

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Nakashima, T., Kikuchi, T., Imokawa, K., Nakamura, D., & Ikenoue, H. (2019). Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition. In D. B. Geohegan, J. J. Dubowski, & A. V. Kabashin (Eds.), Synthesis and Photonics of Nanoscale Materials XVI [109070P] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10907). SPIE. https://doi.org/10.1117/12.2509179

Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition. / Nakashima, Teppei; Kikuchi, Toshifumi; Imokawa, Kaname; Nakamura, Daisuke; Ikenoue, Hiroshi.

Synthesis and Photonics of Nanoscale Materials XVI. ed. / David B. Geohegan; Jan J. Dubowski; Andrei V. Kabashin. SPIE, 2019. 109070P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10907).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakashima, T, Kikuchi, T, Imokawa, K, Nakamura, D & Ikenoue, H 2019, Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition. in DB Geohegan, JJ Dubowski & AV Kabashin (eds), Synthesis and Photonics of Nanoscale Materials XVI., 109070P, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10907, SPIE, Synthesis and Photonics of Nanoscale Materials XVI 2019, San Francisco, United States, 2/2/19. https://doi.org/10.1117/12.2509179
Nakashima T, Kikuchi T, Imokawa K, Nakamura D, Ikenoue H. Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition. In Geohegan DB, Dubowski JJ, Kabashin AV, editors, Synthesis and Photonics of Nanoscale Materials XVI. SPIE. 2019. 109070P. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2509179
Nakashima, Teppei ; Kikuchi, Toshifumi ; Imokawa, Kaname ; Nakamura, Daisuke ; Ikenoue, Hiroshi. / Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition. Synthesis and Photonics of Nanoscale Materials XVI. editor / David B. Geohegan ; Jan J. Dubowski ; Andrei V. Kabashin. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{0dfbe3a0a3d4453b84aceee99f74a7a1,
title = "Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition",
abstract = "We have proposed that germanium-tin (GeSn) particles with high substitutional Sn concentrations can be synthesized by pulsed laser deposition (PLD) in ambient Ar at low pressure (∼100 Pa). In this method, a Ge0.9Sn0.1 target is ablated by KrF excimer laser irradiation. At low Ar pressure (∼100 Pa), the agglomeration of Ge and Sn atoms occurs easily in ambient Ar, and the agglomerated particles are rapidly cooled by collision with Ar atoms. An Si-receiving substrate was placed in front of the target. Various GeSn particles from several 100 nm to approximately 20 μm with spherical, disk, and irregular shapes were deposited on the Si-receiving substrate. In Raman spectra, the Ge-Ge vibration peaks of all the particles were shifted to lower wavenumbers compared with those of the Ge(100) crystal. The Raman peak position reportedly shifts to lower wavenumbers with increased substitutional Sn concentration in crystalline Ge. Thus, GeSn crystal particles with over 10{\%} substituted Sn atoms can be synthesized by low-pressure PLD.",
author = "Teppei Nakashima and Toshifumi Kikuchi and Kaname Imokawa and Daisuke Nakamura and Hiroshi Ikenoue",
year = "2019",
month = "1",
day = "1",
doi = "10.1117/12.2509179",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Geohegan, {David B.} and Dubowski, {Jan J.} and Kabashin, {Andrei V.}",
booktitle = "Synthesis and Photonics of Nanoscale Materials XVI",
address = "United States",

}

TY - GEN

T1 - Synthesis of GeSn particles with high substitutional Sn concentration by pulsed laser deposition

AU - Nakashima, Teppei

AU - Kikuchi, Toshifumi

AU - Imokawa, Kaname

AU - Nakamura, Daisuke

AU - Ikenoue, Hiroshi

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We have proposed that germanium-tin (GeSn) particles with high substitutional Sn concentrations can be synthesized by pulsed laser deposition (PLD) in ambient Ar at low pressure (∼100 Pa). In this method, a Ge0.9Sn0.1 target is ablated by KrF excimer laser irradiation. At low Ar pressure (∼100 Pa), the agglomeration of Ge and Sn atoms occurs easily in ambient Ar, and the agglomerated particles are rapidly cooled by collision with Ar atoms. An Si-receiving substrate was placed in front of the target. Various GeSn particles from several 100 nm to approximately 20 μm with spherical, disk, and irregular shapes were deposited on the Si-receiving substrate. In Raman spectra, the Ge-Ge vibration peaks of all the particles were shifted to lower wavenumbers compared with those of the Ge(100) crystal. The Raman peak position reportedly shifts to lower wavenumbers with increased substitutional Sn concentration in crystalline Ge. Thus, GeSn crystal particles with over 10% substituted Sn atoms can be synthesized by low-pressure PLD.

AB - We have proposed that germanium-tin (GeSn) particles with high substitutional Sn concentrations can be synthesized by pulsed laser deposition (PLD) in ambient Ar at low pressure (∼100 Pa). In this method, a Ge0.9Sn0.1 target is ablated by KrF excimer laser irradiation. At low Ar pressure (∼100 Pa), the agglomeration of Ge and Sn atoms occurs easily in ambient Ar, and the agglomerated particles are rapidly cooled by collision with Ar atoms. An Si-receiving substrate was placed in front of the target. Various GeSn particles from several 100 nm to approximately 20 μm with spherical, disk, and irregular shapes were deposited on the Si-receiving substrate. In Raman spectra, the Ge-Ge vibration peaks of all the particles were shifted to lower wavenumbers compared with those of the Ge(100) crystal. The Raman peak position reportedly shifts to lower wavenumbers with increased substitutional Sn concentration in crystalline Ge. Thus, GeSn crystal particles with over 10% substituted Sn atoms can be synthesized by low-pressure PLD.

UR - http://www.scopus.com/inward/record.url?scp=85066813325&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066813325&partnerID=8YFLogxK

U2 - 10.1117/12.2509179

DO - 10.1117/12.2509179

M3 - Conference contribution

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Synthesis and Photonics of Nanoscale Materials XVI

A2 - Geohegan, David B.

A2 - Dubowski, Jan J.

A2 - Kabashin, Andrei V.

PB - SPIE

ER -