TY - JOUR
T1 - Synthesis of large area, homogeneous, single layer graphene films by annealing amorphous carbon on Co and Ni
AU - Orofeo, Carlo M.
AU - Ago, Hiroki
AU - Hu, Baoshan
AU - Tsuji, Masaharu
N1 - Funding Information:
We would like to thank PRESTO, Japan Science and Technology (JST), a Grant-in-Aid for Scientific Research from MEXT, and the JSPS Funding Program for World-Leading Innovative R&D on Science and Technology (Development of Core Technologies for Green Nano-electronics) for financial support. We acknowledge Prof. Hiroshi Nakashima and Keisuke Yamamoto for helping us with the sheet resistance measurements. C. M. O acknowledges the support from the Global Center of Excellence (GCOE) funding.
PY - 2011/6
Y1 - 2011/6
N2 - The synthesis of large area, homogenous, single layer graphene on cobalt (Co) and nickel (Ni) is reported. The process involves vacuum annealing of sputtered amorphous carbon (a-C) deposited on Co/sapphire or Ni/sapphire substrates. The improved crystallinity of the metal film, assisted by the sapphire substrate, proves to be the key to the quality of as-grown graphene film. The crystallinity of the Co and Ni metal films was improved by sputtering the metal at elevated temperature as was verified by X-ray diffraction (XRD). After sputtering of a-C and annealing, large area, single layer graphene that occupies almost the entire area of the substrate was produced. With this method, 100 mm2-area single layer graphene can be synthesized and is limited only by the substrate and vacuum chamber size. The homogeneity of the graphene film is not dependent on the cooling rate, in contrast to syntheses using polycrystalline metal films and conventional chemical vapor deposition (CVD) growth. Our facile method of producing single layer graphene on Co and Ni metal films should lead to large scale graphene-based applications.
AB - The synthesis of large area, homogenous, single layer graphene on cobalt (Co) and nickel (Ni) is reported. The process involves vacuum annealing of sputtered amorphous carbon (a-C) deposited on Co/sapphire or Ni/sapphire substrates. The improved crystallinity of the metal film, assisted by the sapphire substrate, proves to be the key to the quality of as-grown graphene film. The crystallinity of the Co and Ni metal films was improved by sputtering the metal at elevated temperature as was verified by X-ray diffraction (XRD). After sputtering of a-C and annealing, large area, single layer graphene that occupies almost the entire area of the substrate was produced. With this method, 100 mm2-area single layer graphene can be synthesized and is limited only by the substrate and vacuum chamber size. The homogeneity of the graphene film is not dependent on the cooling rate, in contrast to syntheses using polycrystalline metal films and conventional chemical vapor deposition (CVD) growth. Our facile method of producing single layer graphene on Co and Ni metal films should lead to large scale graphene-based applications.
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U2 - 10.1007/s12274-011-0109-x
DO - 10.1007/s12274-011-0109-x
M3 - Article
AN - SCOPUS:79957502799
SN - 1998-0124
VL - 4
SP - 531
EP - 540
JO - Nano Research
JF - Nano Research
IS - 6
ER -