Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition

Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, Jes Asmussen, Raj K. Thareja

Research output: Contribution to journalConference articlepeer-review

56 Citations (Scopus)

Abstract

Preparation of N-doped ZnO thin films was attempted using various co-doping methods. A ZnO:Ga (Ga2O3 of 5 wt.%) target was ablated in NO gas by pulsed laser deposition (PLD). In addition, a nitrogen ion gun and an ECR nitrogen plasma source were used as post-N-doping treatment of undoped ZnO films. Optical emission from elemental Zn I, Ga I and O I, as well as from N2 molecules, was identified in the plasma plume. The structural, optical and electrical properties of these synthesized films were investigated. All films show n-type conduction, with resistivity in the range 10-3-10-2 Ω cm and carrier density from 1017 to 1020 cm-3.

Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalThin Solid Films
Volume435
Issue number1-2
DOIs
Publication statusPublished - Jul 1 2003
Externally publishedYes
EventProccedings of the Joint International Plasma Symposium - Jeju Island, Korea, Republic of
Duration: Jul 1 2002Jul 4 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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