Synthesis of phosphorus-doped homoepitaxial diamond by microwave plasma-assisted chemical vapor deposition using triethylphosphine as the dopant

T. Saito, M. Kameta, K. Kusakabe, S. Morooka, H. Maeda, T. Asano

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Triethylphosphine [TEP, P(C2H5)3] was used as a dopant for homoepitaxial (100) and (111) phosphorus-doped diamond films, which were formed by microwave plasma-assisted chemical vapor deposition using CH4 as the carbon source. The growth rate of TEP-doped (100) diamond increased with increasing atomic ratio of phosphorus to carbon in the gas phase, from 300 nm h-1 at 0 ppm to 800 nm h-1 at 10 000 ppm at 850 °C. TEP-doped (100) diamond films deposited at temperatures below 850 °C were smooth and homoepitaxial, whereas those deposited above 950 °C as well as the TEP-doped (111) films formed at 750-1050 °C were polycrystalline. Phosphorus was found to be uniformly incorporated into the diamond film, as evidenced by secondary ion mass spectrometry. The Hall conductivity of the TEP-doped films remained low.

Original languageEnglish
Pages (from-to)560-564
Number of pages5
JournalDiamond and Related Materials
Volume7
Issue number2-5
DOIs
Publication statusPublished - Feb 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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