Synthesis of Sb-doped ZnO microspheres by pulsed laser ablation and their photoluminescence properties

T. Tanaka, T. Shimogaki, F. Nagasaki, M. Higashihata, Daisuke Nakamura, Hiroshi Ikenoue, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We succeeded in synthesizing antimony (Sb)-doped ZnO microspheres by ablating a ZnO sintered target containing 5 wt% of Sb with a Nd:YAG laser at a fluence of 25 J/cm 2 in air. The well-spherical ZnO microcrystals with diameters of 1-20 μm were collected on a substrate which was put near the ablation spot. Most of the ZnO microspheres have a crystalline structure. In addition, Raman peak of the Sb-doped ZnO microspheres was shifted toward lower frequency side, indicating substitutional Sb 3+ at Zn antisite. Room-temperature photoluminescence properties of the microsphere were investigated under 325 nm He-Cd laser or 355 nm Nd:YAG laser excitation. An ultraviolet (UV) emission and lasing in whispering gallery mode were observed from the photoexcited microsphere.

Original languageEnglish
Title of host publicationLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
EditorsStephan Roth, Xianfan Xu, Yoshiki Nakata, Beat Neuenschwander
PublisherSPIE
ISBN (Electronic)9781628414400
DOIs
Publication statusPublished - Jan 1 2015
EventLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX - San Francisco, United States
Duration: Feb 9 2015Feb 12 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9350
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
CountryUnited States
CitySan Francisco
Period2/9/152/12/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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