Synthesis of Si-C-N amorphous powder by imide method and its crystallization behavior

M. Uehara, K. Washio, Naoya Enomoto, J. Hojo

Research output: Contribution to journalArticle

Abstract

The imide powders of Si-C-N-H system were formed by liquid phase reaction in SiCl4-CH3SiCl3-NH3 or SiCl4-(C2H5)2NH system in n-hexane and decomposed at 900°C in vacuum to amorphous powder of Si-C-N system. The powders were heat-treated in N2 at 1400 - 1800°C. Si3N4 was crystallized above 1500°C and SiC was formed at higher temperatures. The formation temperature of SiC lowered with an increase of the carbon content in the synthesis system. The SEM-EDX indicated that the detected carbon content was small, when Si3N4 phase was predominant, and increased according to SiC formation at high temperatures. This means that carbon may be included inside Si3N4 particles, reacting with Si3N4 to form SiC at higher temperatures. This results suggests that Si3N4-SiC composite can be fabricated from the Si-C-N amorphous powder by optimizing starting materials and heat treatment condition.

Original languageEnglish
Pages (from-to)854-857
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume48
Issue number9
DOIs
Publication statusPublished - Jan 1 2001

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Imides
Crystallization
Powders
Carbon
Temperature
Hexane
Energy dispersive spectroscopy
Heat treatment
Vacuum
Scanning electron microscopy
silicon nitride
Composite materials
Liquids

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Synthesis of Si-C-N amorphous powder by imide method and its crystallization behavior. / Uehara, M.; Washio, K.; Enomoto, Naoya; Hojo, J.

In: Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, Vol. 48, No. 9, 01.01.2001, p. 854-857.

Research output: Contribution to journalArticle

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