TY - JOUR
T1 - Synthesis of tin oxide thin films by pulsed laser deposition using SnO2 targets
AU - Suda, Yoshiaki
AU - Kawasaki, Hiroharu
AU - Doi, Kazuya
AU - Nanba, Jun
AU - Wada, Kenji
AU - Ebihara, Kenji
AU - Ohshima, Tamiko
N1 - Funding Information:
This work was supported in part by the Grant-in-Aid for Scientific Research (B) and the Regional Science Promoter Program and a Figure 5. Gas sensitivity of the SnO2 films prepared using Nd:YAG laser deposition method for 0.31vol%H2.
Funding Information:
Research Fund from the Nagasaki Super Technology Development Association. The authors wish to thank Drs. T. Ikegami and Y. Yamagata of Kumamoto University for their helpful discussions. The authors also wish to thank Dr. H. Abe and Mr. H. Yoshida of the Ceramic Research Center of Nagasaki for their technical assistance with the experimental data.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2001
Y1 - 2001
N2 - Tin oxide (SnO2) thin films have been grown on Si (100) and Al2O3 substrates by pulsed Nd:YAG (532nm) and KrF excimer (248 nm) laser deposition methods using SnO2 targets. X-ray diffraction measurement showed that the almost amorphous microstructure transformed into a crystalline SnO2 phase and preferred orientation varied from (101) to (110) on Si (100) with increasing oxygen gas pressure. This result suggests that oxygen gas pressure affects the phase formation, crystalline structure and preferred orientation of the films. Gas sensing properties of SnO2 thin films by PLD method were also investigated over the temperature range 300 - 600°C, using 0.31 vol% H2 as a test gas. The oxygen gas pressure results in a notable change in gas sensing properties of SnO2 thin films.
AB - Tin oxide (SnO2) thin films have been grown on Si (100) and Al2O3 substrates by pulsed Nd:YAG (532nm) and KrF excimer (248 nm) laser deposition methods using SnO2 targets. X-ray diffraction measurement showed that the almost amorphous microstructure transformed into a crystalline SnO2 phase and preferred orientation varied from (101) to (110) on Si (100) with increasing oxygen gas pressure. This result suggests that oxygen gas pressure affects the phase formation, crystalline structure and preferred orientation of the films. Gas sensing properties of SnO2 thin films by PLD method were also investigated over the temperature range 300 - 600°C, using 0.31 vol% H2 as a test gas. The oxygen gas pressure results in a notable change in gas sensing properties of SnO2 thin films.
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U2 - 10.1557/proc-672-o10.10
DO - 10.1557/proc-672-o10.10
M3 - Conference article
AN - SCOPUS:0035560025
SN - 0272-9172
VL - 672
SP - O10.10.1-O10.10.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures
Y2 - 17 April 2001 through 20 April 2001
ER -