Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation

Akio Kumeda; K. Toya; K. Kubo; K. Tsuta; M. Higashihata; Daisuke Nakamura; T. Okada; Bingqiang Cao; Kentaro Sakai

doi:10.1109/TENCON.2010.5686692

Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation

Akio Kumeda, K. Toya, K. Kubo, K. Tsuta, M. Higashihata, Daisuke Nakamura, T. Okada, Bingqiang Cao, Kentaro Sakai

Applied Energy Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P₂ O₅ was used for synthesis the ZnO:P nanowires.

Original language	English
Title of host publication	TENCON 2010 - 2010 IEEE Region 10 Conference
Pages	446-448
Number of pages	3
DOIs	https://doi.org/10.1109/TENCON.2010.5686692
Publication status	Published - Dec 1 2010
Event	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: Nov 21 2010 → Nov 24 2010

Other

Other	2010 IEEE Region 10 Conference, TENCON 2010
Country/Territory	Japan
City	Fukuoka
Period	11/21/10 → 11/24/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1109/TENCON.2010.5686692

Cite this

Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation. / Kumeda, Akio; Toya, K.; Kubo, K.; Tsuta, K.; Higashihata, M.; Nakamura, Daisuke; Okada, T.; Cao, Bingqiang; Sakai, Kentaro.

TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 446-448 5686692.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumeda, A, Toya, K, Kubo, K, Tsuta, K, Higashihata, M, Nakamura, D, Okada, T, Cao, B & Sakai, K 2010, Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686692, pp. 446-448, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686692

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abstract = "Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P2 O5 was used for synthesis the ZnO:P nanowires.",

author = "Akio Kumeda and K. Toya and K. Kubo and K. Tsuta and M. Higashihata and Daisuke Nakamura and T. Okada and Bingqiang Cao and Kentaro Sakai",

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AU - Nakamura, Daisuke

AU - Okada, T.

AU - Cao, Bingqiang

AU - Sakai, Kentaro

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AB - Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P2 O5 was used for synthesis the ZnO:P nanowires.

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BT - TENCON 2010 - 2010 IEEE Region 10 Conference

T2 - 2010 IEEE Region 10 Conference, TENCON 2010

Y2 - 21 November 2010 through 24 November 2010

ER -

Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation

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