Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation

Akio Kumeda, K. Toya, K. Kubo, K. Tsuta, M. Higashihata, Daisuke Nakamura, T. Okada, Bingqiang Cao, Kentaro Sakai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P2 O5 was used for synthesis the ZnO:P nanowires.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages446-448
Number of pages3
DOIs
Publication statusPublished - Dec 1 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

Fingerprint Dive into the research topics of 'Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation'. Together they form a unique fingerprint.

Cite this