TY - GEN
T1 - Synthesizing and subsequent annealing of Si-based thermoelectric material Ba8AuxSi46-x clathrates
AU - Liu, Bin
AU - Saisho, Makoto
AU - Nagatomo, Yuya
AU - Tajiri, Mikihito
AU - Nakakohara, Yusuke
AU - Furukimi, Osamu
AU - Teranishi, Ryo
AU - Munetoh, Shinji
PY - 2012/12/1
Y1 - 2012/12/1
N2 - We prepared the type-I Ba8AuxSi46-x (x=5.5, 5.4 and 5.33) clathrates with p-type conduction by arc-melting and subsequent annealing. The Seebeck coefficients of all as-synthesized samples were negative. After annealing, in the case of x=5.4 and 5.5, the Seebeck coefficients changed to positive, and in the case of x=5.33, this value was negative for the annealed sample. The chemical composition revealed that Au content in the Ba8AuxSi46-x clathrates increased after the annealing process. The backscattered electron images showed that there were many Au-excess regions which were not clathrate structure in the as-synthesized samples, and these regions decreased and even disappeared after the annealing process. The disappearing of Au-excess regions can be explained by the diffusion of Au atoms from the Au-excess regions into the clathrates. Based on these results, annealing treatment can be used to tune the carrier conduction by controlling the content of Au for type-I Ba8Au xSi46-x clathrates.
AB - We prepared the type-I Ba8AuxSi46-x (x=5.5, 5.4 and 5.33) clathrates with p-type conduction by arc-melting and subsequent annealing. The Seebeck coefficients of all as-synthesized samples were negative. After annealing, in the case of x=5.4 and 5.5, the Seebeck coefficients changed to positive, and in the case of x=5.33, this value was negative for the annealed sample. The chemical composition revealed that Au content in the Ba8AuxSi46-x clathrates increased after the annealing process. The backscattered electron images showed that there were many Au-excess regions which were not clathrate structure in the as-synthesized samples, and these regions decreased and even disappeared after the annealing process. The disappearing of Au-excess regions can be explained by the diffusion of Au atoms from the Au-excess regions into the clathrates. Based on these results, annealing treatment can be used to tune the carrier conduction by controlling the content of Au for type-I Ba8Au xSi46-x clathrates.
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U2 - 10.1557/opl.2012.1512
DO - 10.1557/opl.2012.1512
M3 - Conference contribution
AN - SCOPUS:84879514017
SN - 9781627482523
T3 - Materials Research Society Symposium Proceedings
SP - 39
EP - 43
BT - Nanoscale Thermoelectrics 2012 - Materials and Transport Phenomena
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -