Abstract
Adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces is systematically investigated by using our ab initio-based approach and the Monte Carlo methods. The change in stable structure of the c(4 × 4) surfaces is clarified by considering adsorption or desorption of surface dimers as functions of temperature and As pressure. The calculated results imply that the c(4 × 4) surface with As dimers is stable at low temperatures less than ∼400 K, whereas the surface with Ga-As dimers is stabilized at high temperatures in the range of ∼400-700 K. The disordered dimer arrangements consisting of Ga and As substituted by each other in the c(4 × 4) unit cell hardly appear even at high temperatures such as -∼800 K. We also investigate the behavior of Ga and As adatoms on these c(4 × 4) surfaces. The calculated results reveal that Ga atoms can adsorb and migrate on the surfaces while desorption of As adatoms proceeds without sufficient migration. Therefore, Ga adatoms play an important role for the epitaxial growth of GaAs on the GaAs(0 0 l)-c(4 × 4) surface.
| Original language | English |
|---|---|
| Pages (from-to) | 194-199 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 237 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Oct 15 2004 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces. / Ito, Tomonori; Tsutsumida, Kazumi; Nakamura, Kohji; Kangawa, Yoshihiro; Shiraishi, Kenji; Taguchi, Akihito; Kageshima, Hiroyuki.
In: Applied Surface Science, Vol. 237, No. 1-4, 15.10.2004, p. 194-199.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces
AU - Ito, Tomonori
AU - Tsutsumida, Kazumi
AU - Nakamura, Kohji
AU - Kangawa, Yoshihiro
AU - Shiraishi, Kenji
AU - Taguchi, Akihito
AU - Kageshima, Hiroyuki
PY - 2004/10/15
Y1 - 2004/10/15
N2 - Adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces is systematically investigated by using our ab initio-based approach and the Monte Carlo methods. The change in stable structure of the c(4 × 4) surfaces is clarified by considering adsorption or desorption of surface dimers as functions of temperature and As pressure. The calculated results imply that the c(4 × 4) surface with As dimers is stable at low temperatures less than ∼400 K, whereas the surface with Ga-As dimers is stabilized at high temperatures in the range of ∼400-700 K. The disordered dimer arrangements consisting of Ga and As substituted by each other in the c(4 × 4) unit cell hardly appear even at high temperatures such as -∼800 K. We also investigate the behavior of Ga and As adatoms on these c(4 × 4) surfaces. The calculated results reveal that Ga atoms can adsorb and migrate on the surfaces while desorption of As adatoms proceeds without sufficient migration. Therefore, Ga adatoms play an important role for the epitaxial growth of GaAs on the GaAs(0 0 l)-c(4 × 4) surface.
AB - Adsorption behavior on the GaAs(0 0 l)-c(4 × 4) surfaces is systematically investigated by using our ab initio-based approach and the Monte Carlo methods. The change in stable structure of the c(4 × 4) surfaces is clarified by considering adsorption or desorption of surface dimers as functions of temperature and As pressure. The calculated results imply that the c(4 × 4) surface with As dimers is stable at low temperatures less than ∼400 K, whereas the surface with Ga-As dimers is stabilized at high temperatures in the range of ∼400-700 K. The disordered dimer arrangements consisting of Ga and As substituted by each other in the c(4 × 4) unit cell hardly appear even at high temperatures such as -∼800 K. We also investigate the behavior of Ga and As adatoms on these c(4 × 4) surfaces. The calculated results reveal that Ga atoms can adsorb and migrate on the surfaces while desorption of As adatoms proceeds without sufficient migration. Therefore, Ga adatoms play an important role for the epitaxial growth of GaAs on the GaAs(0 0 l)-c(4 × 4) surface.
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UR - http://www.scopus.com/inward/citedby.url?scp=4644296198&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2004.06.125
DO - 10.1016/j.apsusc.2004.06.125
M3 - Article
AN - SCOPUS:4644296198
VL - 237
SP - 194
EP - 199
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -