A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.
|Number of pages||4|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Sep 1 1997|
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering