Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

Research output: Contribution to journalArticle

Abstract

A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

Original languageEnglish
Pages (from-to)225-228
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume2
Issue number2
Publication statusPublished - Sep 1 1997
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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