Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai; Akiyoshi Baba; Atsushi Kenjo; Taizoh Sadoh; Hiroshi Nakashima; Hiroshi Mori; Toshio Tsurushima

Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Abstract

A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar ⁺ ions, and the partially masked surfaces are etched with an aqueous solution of FeCl ₃-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

Original language	English
Pages (from-to)	225-228
Number of pages	4
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	2
Issue number	2
Publication status	Published - Sept 1 1997

All Science Journal Classification (ASJC) codes

Computer Science(all)
Electrical and Electronic Engineering

Cite this

@article{1dace77085d945cc8bdf8aad76cd7adb,

title = "Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect",

abstract = "A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.",

author = "Bai, {Dong Ju} and Akiyoshi Baba and Atsushi Kenjo and Taizoh Sadoh and Hiroshi Nakashima and Hiroshi Mori and Toshio Tsurushima",

year = "1997",

month = sep,

day = "1",

language = "English",

volume = "2",

pages = "225--228",

journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

issn = "1342-3819",

publisher = "Kyushu University, Faculty of Science",

number = "2",

}

TY - JOUR

T1 - Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

AU - Bai, Dong Ju

AU - Baba, Akiyoshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Nakashima, Hiroshi

AU - Mori, Hiroshi

AU - Tsurushima, Toshio

PY - 1997/9/1

Y1 - 1997/9/1

N2 - A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

AB - A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

UR - http://www.scopus.com/inward/record.url?scp=0031223837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031223837&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031223837

SN - 1342-3819

VL - 2

SP - 225

EP - 228

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

IS - 2

ER -

Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Abstract

All Science Journal Classification (ASJC) codes

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