Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

Research output: Contribution to journalArticle

Abstract

A technique for fabricating tapered-surface structures on GaAs crystals is demonstrated. GaAs crystals are bombarded with low-energy (5 keV) Ar + ions, and the partially masked surfaces are etched with an aqueous solution of FeCl 3-HCl. Effect of the ion bombardmentenhanced etching is utilized to proceed a high-rate lateral etching under the mask, and to reveal a surface with a taper angle of 10-45°, depending on the ion dose.

Original languageEnglish
Pages (from-to)225-228
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume2
Issue number2
Publication statusPublished - Sep 1997
Externally publishedYes

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Ion bombardment
Etching
Ions
Crystals
Surface structure
Masks

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Engineering (miscellaneous)

Cite this

Tapered-surface etching of GaAs utilizing low-energy ion bombardment effect. / Bai, Dong Ju; Baba, Akiyoshi; Kenjo, Atsushi; Sadoh, Taizoh; Nakashima, Hiroshi; Mori, Hiroshi; Tsurushima, Toshio.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 2, No. 2, 09.1997, p. 225-228.

Research output: Contribution to journalArticle

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AU - Mori, Hiroshi

AU - Tsurushima, Toshio

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