Transmission electron microscope (TEM) analysis was performed for the anti-surfactant (AS)-treated interface of GaN thin films deposited by the metal-organic vapor-phase epitaxy method. It was revealed that the AS-treatment with supplying a gas-source of tetraethyl-silicon (TESi) forms an interface layer of about 1 nm thickness. The electron diffraction pattern for the interface layer shows a streak along [0 0 0 1] at about one-thrid positions between hkil=0 0 0 0 and over(1, -) 2 over(1, -) 0. The point analysis of energy dispersive X-ray spectroscopy (EDS) confirmed that the interface layer contains a certain amount of silicon. These results revealed that the interface layer is a crystalline phase of silicon compound. The effect of the interface layer on the morphology of threading dislocations was also discussed in terms of coherency of the interface layer with GaN.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry