TEM characterization of Ge precipitates in an Al-1.6 at% Ge alloy

K. Kaneko, K. Inoke, K. Sato, K. Kitawaki, H. Higashida, I. Arslan, P. A. Midgley

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44 Citations (Scopus)

Abstract

The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.

Original languageEnglish
Pages (from-to)210-220
Number of pages11
JournalUltramicroscopy
Volume108
Issue number3
DOIs
Publication statusPublished - Feb 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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