TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent

K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara, K. Nakajima

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

TEM characterization was carried out on the epitaxial interface formed by seeded solution growth of 6H-SiC using metal solvents such as Ti and Mn. The penetration of the solution into the micropipes and its solidification behavior were clearly observed. Although stacking faults are introduced in the vicinity of micropipes during the solidification, it decreases as the growth proceeds. The micropipes are terminated by the lateral overgrowth of epitaxial SiC layer. The crystallinity of 6H-SiC obtained from Si-Ti-C solution is much better than that obtained from Si-Mn-C solution.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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