TEM/AFM observation of crack tip plasticity in silicon single crystals

M. Tanaka, T. Fukui, T. Yamagata, T. Morikawa, K. Higashida, R. Onodera

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    4 Citations (Scopus)


    Crack tip plasticity in silicon single crystals has been investigated using both high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were introduced into a (001) silicon wafer at room temperature by Vickers indentation method. The specimen temperature was increased to more than 873 K to activate dislocation generation around the crack tip under a residual stress due to the indentation. In specimens without the heat-treatment, no dislocations were observed around the crack, while in specimens with the heat-treatment, characteristic dislocation configurations were observed near the crack tip. AFM observations showed that slip bands were formed around the crack tip in the heat-treated specimens, and that the step heights of those slip bands were around one nanometer. Such crack tip plasticity is considered to be caused by mainly mode I tensile load, and contribute to increasing fracture toughness.

    Original languageEnglish
    Pages (from-to)1839-1842
    Number of pages4
    JournalMaterials Transactions
    Issue number9
    Publication statusPublished - Jan 1 2001

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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