Abstract
Crack tip plasticity in silicon single crystals has been investigated using both high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were introduced into a (001) silicon wafer at room temperature by Vickers indentation method. The specimen temperature was increased to more than 873 K to activate dislocation generation around the crack tip under a residual stress due to the indentation. In specimens without the heat-treatment, no dislocations were observed around the crack, while in specimens with the heat-treatment, characteristic dislocation configurations were observed near the crack tip. AFM observations showed that slip bands were formed around the crack tip in the heat-treated specimens, and that the step heights of those slip bands were around one nanometer. Such crack tip plasticity is considered to be caused by mainly mode I tensile load, and contribute to increasing fracture toughness.
| Original language | English |
|---|---|
| Pages (from-to) | 1839-1842 |
| Number of pages | 4 |
| Journal | Materials Transactions |
| Volume | 42 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Jan 1 2001 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
TEM/AFM observation of crack tip plasticity in silicon single crystals. / Tanaka, Masaki; Fukui, T.; Yamagata, T.; Morikawa, Tatsuya; Higashida, K.; Onodera, R.
In: Materials Transactions, Vol. 42, No. 9, 01.01.2001, p. 1839-1842.Research output: Contribution to journal › Article
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TY - JOUR
T1 - TEM/AFM observation of crack tip plasticity in silicon single crystals
AU - Tanaka, Masaki
AU - Fukui, T.
AU - Yamagata, T.
AU - Morikawa, Tatsuya
AU - Higashida, K.
AU - Onodera, R.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - Crack tip plasticity in silicon single crystals has been investigated using both high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were introduced into a (001) silicon wafer at room temperature by Vickers indentation method. The specimen temperature was increased to more than 873 K to activate dislocation generation around the crack tip under a residual stress due to the indentation. In specimens without the heat-treatment, no dislocations were observed around the crack, while in specimens with the heat-treatment, characteristic dislocation configurations were observed near the crack tip. AFM observations showed that slip bands were formed around the crack tip in the heat-treated specimens, and that the step heights of those slip bands were around one nanometer. Such crack tip plasticity is considered to be caused by mainly mode I tensile load, and contribute to increasing fracture toughness.
AB - Crack tip plasticity in silicon single crystals has been investigated using both high voltage electron microscopy (HVEM) and atomic force microscopy (AFM). Cracks were introduced into a (001) silicon wafer at room temperature by Vickers indentation method. The specimen temperature was increased to more than 873 K to activate dislocation generation around the crack tip under a residual stress due to the indentation. In specimens without the heat-treatment, no dislocations were observed around the crack, while in specimens with the heat-treatment, characteristic dislocation configurations were observed near the crack tip. AFM observations showed that slip bands were formed around the crack tip in the heat-treated specimens, and that the step heights of those slip bands were around one nanometer. Such crack tip plasticity is considered to be caused by mainly mode I tensile load, and contribute to increasing fracture toughness.
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U2 - 10.2320/matertrans.42.1839
DO - 10.2320/matertrans.42.1839
M3 - Article
VL - 42
SP - 1839
EP - 1842
JO - Materials Transactions
JF - Materials Transactions
SN - 0916-1821
IS - 9
ER -