Temperature dependence of Eu 4f states in EuPd2Si2

Bulk-sensitive high-resolution photoemission study

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalPhysica B: Condensed Matter
Volume351
Issue number3-4
DOIs
Publication statusPublished - Sep 15 2004
Externally publishedYes

Fingerprint

Photoemission
photoelectric emission
temperature dependence
high resolution
Photoelectron spectroscopy
Temperature
temperature
valence
spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Temperature dependence of Eu 4f states in EuPd2Si2 : Bulk-sensitive high-resolution photoemission study. / Mimura, Kojiro; Taguchi, Yukihiro; Fukuda, Shuichi; Mitsuda, Akihiro; Sakurai, Junji; Ichikawa, Kouichi; Aita, Osamu.

In: Physica B: Condensed Matter, Vol. 351, No. 3-4, 15.09.2004, p. 292-294.

Research output: Contribution to journalArticle

Mimura, Kojiro ; Taguchi, Yukihiro ; Fukuda, Shuichi ; Mitsuda, Akihiro ; Sakurai, Junji ; Ichikawa, Kouichi ; Aita, Osamu. / Temperature dependence of Eu 4f states in EuPd2Si2 : Bulk-sensitive high-resolution photoemission study. In: Physica B: Condensed Matter. 2004 ; Vol. 351, No. 3-4. pp. 292-294.
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