Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

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5 Citations (Scopus)


Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalPhysica B: Condensed Matter
Issue number3-4
Publication statusPublished - Sep 15 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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