Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study

Kojiro Mimura; Yukihiro Taguchi; Shuichi Fukuda; Akihiro Mitsuda; Junji Sakurai; Kouichi Ichikawa; Osamu Aita

doi:10.1016/j.physb.2004.06.030

Temperature dependence of Eu 4f states in EuPd₂Si₂: Bulk-sensitive high-resolution photoemission study

Kojiro Mimura, Yukihiro Taguchi, Shuichi Fukuda, Akihiro Mitsuda, Junji Sakurai, Kouichi Ichikawa, Osamu Aita

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Eu 4f states in EuPd₂Si₂ have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu²⁺ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu²⁺ drastically increases around 150K, while that of bulk Eu³⁺ decreases. The bulk Eu³⁺ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd₂Si₂ are thus successfully observed in the temperature-dependent photoemission spectra.

Original language	English
Pages (from-to)	292-294
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	351
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physb.2004.06.030
Publication status	Published - Sept 15 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2004.06.030

Cite this

@article{e9d8fa153f4f42cf818ba0d5345f0528,

title = "Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study",

abstract = "Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.",

author = "Kojiro Mimura and Yukihiro Taguchi and Shuichi Fukuda and Akihiro Mitsuda and Junji Sakurai and Kouichi Ichikawa and Osamu Aita",

year = "2004",

month = sep,

day = "15",

doi = "10.1016/j.physb.2004.06.030",

language = "English",

volume = "351",

pages = "292--294",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Temperature dependence of Eu 4f states in EuPd2Si2

T2 - Bulk-sensitive high-resolution photoemission study

AU - Mimura, Kojiro

AU - Taguchi, Yukihiro

AU - Fukuda, Shuichi

AU - Mitsuda, Akihiro

AU - Sakurai, Junji

AU - Ichikawa, Kouichi

AU - Aita, Osamu

PY - 2004/9/15

Y1 - 2004/9/15

N2 - Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

AB - Eu 4f states in EuPd2Si2 have been investigated by bulk-sensitive high-resolution photoemission spectroscopy at temperatures from 20 to 300K. A bulk Eu2+ 4f component is definitely distinguished from two surface components. As the temperature is increasing, the spectral intensity of bulk Eu2+ drastically increases around 150K, while that of bulk Eu3+ decreases. The bulk Eu3+ 4f component is shifted by 0.2eV from 100 to 200K. The changes associated with the valence transition of EuPd2Si2 are thus successfully observed in the temperature-dependent photoemission spectra.

UR - http://www.scopus.com/inward/record.url?scp=4644247441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4644247441&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2004.06.030

DO - 10.1016/j.physb.2004.06.030

M3 - Article

AN - SCOPUS:4644247441

SN - 0921-4526

VL - 351

SP - 292

EP - 294

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 3-4

ER -

Temperature dependence of Eu 4f states in EuPd₂Si₂: Bulk-sensitive high-resolution photoemission study

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this