TY - JOUR
T1 - Temperature dependence of resistivity increases induced by thiols adsorption in gold nanosheets
AU - Kato, Taro
AU - Tanaka, Takahisa
AU - Yajima, Takeaki
AU - Uchida, Ken
N1 - Funding Information:
This work was performed using facilities of the Cryogenic Research Center, the Univ. of Tokyo. The authors thank Prof. H. Kondoh and Dr. R. Toyoshima of Keio Univ. for fruitful discussions on thiolate-SAM and surface characterization. This work was partly supported by JST CREST Grant No. JPMJCR19I2 and JSPS KAKENHI Grant No. 19H00756, 18H05423. A part of this work was conducted at Takeda Sentanchi Supercleanroom, The University of Tokyo, supported by “Nanotechnology Platform Program” of MEXT, Japan, Grant No. JPMXP09F20UT0003.
Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/5
Y1 - 2021/5
N2 - By utilizing stable thiol self-assembled monolayers (SAMs) on gold (Au) nanosheets, we investigated the temperature dependence of the amount of resistivity increases Drad by SAM modification. Drad increased with increasing temperature from 5 to 375 K in all the measured nanosheets for various thicknesses (9-20 nm). We consider from the DFT calculation that the temperature dependence originates from unoccupied states of sulfur atoms above the Fermi level of Au. The available unoccupied states increase at higher temperatures, which enhances scattering rates and thus increases the resistivity. Furthermore, we calculated the temperature dependence of Drad using the Bloch-Grüneisen theory and Fuchs-Sondheimer (FS) model. Based on the results, we conclude that for ultra-thin metal films, the temperature-dependent specularity parameter PT which represents the fraction of electrons scattered specularly should be introduced into the conventional FS model to predict Drad over a wide temperature range.
AB - By utilizing stable thiol self-assembled monolayers (SAMs) on gold (Au) nanosheets, we investigated the temperature dependence of the amount of resistivity increases Drad by SAM modification. Drad increased with increasing temperature from 5 to 375 K in all the measured nanosheets for various thicknesses (9-20 nm). We consider from the DFT calculation that the temperature dependence originates from unoccupied states of sulfur atoms above the Fermi level of Au. The available unoccupied states increase at higher temperatures, which enhances scattering rates and thus increases the resistivity. Furthermore, we calculated the temperature dependence of Drad using the Bloch-Grüneisen theory and Fuchs-Sondheimer (FS) model. Based on the results, we conclude that for ultra-thin metal films, the temperature-dependent specularity parameter PT which represents the fraction of electrons scattered specularly should be introduced into the conventional FS model to predict Drad over a wide temperature range.
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U2 - 10.35848/1347-4065/abd6de
DO - 10.35848/1347-4065/abd6de
M3 - Article
AN - SCOPUS:85101191277
SN - 0021-4922
VL - 60
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - SB
M1 - SBBH13
ER -