Temperature dependence of single-event burnout for super junction MOSFET

Shunsuke Katoh, Eiji Shimada, Takayuki Yoshihira, Akihiro Oyama, Syotaro Ono, Hideyuki Ura, Gentaro Ookura, Wataru Saito, Yusuke Kawaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of Super-junction (SJ) MOSFET on temperature and studied the mechanism of the dependence of SEB failure rate on temperature by simulation.

Original languageEnglish
Title of host publication2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-96
Number of pages4
ISBN (Electronic)9781479962594
DOIs
Publication statusPublished - Jun 12 2015
Externally publishedYes
Event27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China
Duration: May 10 2015May 14 2015

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2015-June
ISSN (Print)1063-6854

Other

Other27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
CountryChina
CityHong Kong
Period5/10/155/14/15

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Katoh, S., Shimada, E., Yoshihira, T., Oyama, A., Ono, S., Ura, H., ... Kawaguchi, Y. (2015). Temperature dependence of single-event burnout for super junction MOSFET. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 93-96). [7123397] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123397